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EBE로 증착된 반도체 CdZnTe 박막의 결정구조와 표면조성
박국상,김선옥,이기암 한국결정성장학회 1995 韓國結晶成長學會誌 Vol.5 No.1
유리기판(Corning 7059) 위에 Electron Beam Evaporator(EBE)로 진공 중에서 증착된 $Cd_{1-y}Zn_{y}Te$(CZT) 박막의 표면 조성비와 결정구조를 조사하였다. 증착시 기판의 온도는 각각 실온과 $300^{\circ}C$였으며, 열처리는 압력 $1 {\times} 10^{-6}$ torr하에서 $300^{\circ}C$에서 1시간 동안 행하였다. 증착된 CZT 박막의 표면조성비는 Cd 원자가 상대적으로 약 4% 정도 부족하였고, Zn원자는 비교적 안정하였다. 박막의 구조는 거의 Cubic phase인 다결정(polycrystal)이었다. $400^{\circ}C$에서 측정된 X-선 분말 회절상으로부터 구한 격자상수 값으로부터 계산된 열팽창 계수는 $6.30 {\times} 10^{-6}/^{\circ}C$ 이었다. 박막은 열처리에 의하여 회절상의 peak가 증가하였으나 기판의 온도가 결정화에 더 큰 영향을 미치는 것으로 판단된다. We have investigated the structure and the conductivity of the $Cd_{1-y}Zn_{y}$ Te films evaporated on the glass substrates (Corning 7059) by Electron Beam Evaporator (EBE) in pressure of approximately $1 {\times} 10^{-6}$ torr.The structure temperatures were held at both room temperature and $300^{\circ}C$, and the samples have annealed for an hour at $300^{\circ}C$ The survace com-position of the as-prepared films were slightly different from those of CdZn Te source material.Cd losses on the CdZnTe surface was measured about 4% of atomic ratio at room temperature substrate, whereas Zn atomic ratio was nearly constant, relatively. The strure is observed to be polycrystalline whose phase is mainly cubic phase. Thermal expansion coefficient was $6.30 {\times} 10^{-5}/^{\circ}C$ which was calculated from the variation of lattice parameter by X-ray powder pat-terns measured at $400^{\circ}C$.Diffraction peaks were slightly increased by annealing for an hour at $300^{\circ}C $, but they werey highly affected by substrate temperature during evaporation.
X선 저각산란기술을 이용한 B2O3-BaO-Fe2O3의 상분리에 관한 연구
박만장,정환재,이기암 全南大學校 師範大學 科學敎育硏究所 1982 科學敎育硏究誌 Vol.7 No.1
Studies of phase separation on a 68(M%) B2O3, 17(M%) BaO, 15(M%) Fe2O3 glass have been investigated by employing small angle X-ray scattering (SAXS)techniques. Studies of the precipitated particle size are performed on the single composition of glass, heat treated at 590℃ for different heat treatment times. In the early stages of phase separation, SAXS revealed the presence of a single sized particle present at the inhomogeneity in the heat treated glass matrix. For long heat treatment times, SAXS is able to reveal the presence of two different particle size in the heat treated specimens, and to give information about the diameter of the particles involved. Atte mpting to fit the SAXS data to a reasonable distribution. It is, for example, found that lognormal distribution function is not successful, particulerly for long heat treatment.
이기암,박국상 단국대학교 1999 論文集 Vol.34 No.-
High quality 3C-SiC epilayer was grown on Si(lll) at 1250 ℃ using chemical vapor deposition(CVD) technique by pyrolyzing tetramethylsilane(TMS). The crystallinity and electrical properties of 3C-SiC epilayer were investigated by X-ray diffraction. Fourier-transform infrared spectroscopy. Raman spectrum. Hall measurement and current-voltage characteristics(Ⅰ-Ⅴ).
Ti/SiC(4H) 쇼트키 장벽 다이오드의 전기적 특성
박국상,김정윤,이기암,장성주 한국결정성장학회 1997 한국결정성장학회지 Vol.7 No.3
SiC(4H) 결정에 Ti을 열증착하여 Ti/SiC(4H) 쇼트키(Schottky) 장벽 다이오드를 만들었다. SiC(4H)의 주개농도(donor concentration)는 전기용량-전압(C-V) 측정으로부터 $2.0{\times}10^{15}{\textrm}{cm}^{-3}$이었으며, 내부전위(built-in potential)는 0.65 V이었다. 전류-전압(I-V) 특성으로 부터 다이오드의 이상계수(ideally factor)는 1.07이었으며, 역방향 항복전장(breakdown field)은 약 $1.7{\times}10^3V/{\textrm}{cm}$이었다. 상온에서 $140^{\circ}C$까지 온도변화에 따라 측정된 포화전류로 부터 구한 전위장벽(potential barrier)은 0.91 V이었는데, 이는 C-V 특성으로 부터 구한 전위장벽과 거의 같았다. Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.
박국상,이기암 한국결정성장학회 1997 韓國結晶成長學會誌 Vol.7 No.1
$p^+$/n/n 메사(mesa) 구조를 갖는 6H-SiC UV 광다이오드를 제작하여 입사 파장 200~600 nm의 영역에서 광전류(photocurrent)를 측정하였다. 광다이오드의 파장의 변화에 따라 측정된 광전류는 자외선 영역에서 민감하며 260 nm 근처에서 최대값을 나타내었다. 광다이오드의 광전류 분포를 해석하기 위하여 소수 운반자의 확산모델로 양자효율을 계산하였으며, 계산된 양자효율은 측정된 광전류 분포와 상대적으로 비교되었다. 6H-SiC UV 광다이오드의 광전류 분포는 공핍층에서 광흡수가 포함된 소수운반자의 확산모델에 의하여 해석되었다. 6H-SiC UV photodiodes with $p^+$/n/n mesa structure were fabricated. The photocurrents of the photodiodes were measured in the wavelength range of 200~600 nm. The photocurrents were sensitive to ultraviolet radiation of 200~500 nm, and come to the maximum value at 260 nm. The quantum efficiency was calculated by using the diffusion model of minority carriers, and compared with the distribution of the photocurrent measured as a function of wavelength each other. The photocurrents of the 6H-SiC photodiode were explained by the diffusion model of the minority carriers which contained the optical absorption of the depletion region as well as the other layers.