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Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms
황진웅,이지은,강민희,박병규,Jonathan Denlinger,모성관,황춘규 한국진공학회 2018 Applied Science and Convergence Technology Vol.27 No.5
The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angleresolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.