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        분리된 게이트 구조를 갖는 필드 스톱 IGBT의 전기적 특성에 관한 연구

        조형성,이장현,리긍연,강이구 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.6

        In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 μm, and the on-state voltage drop was the lowest at 3.5 μm. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

      • KCI등재

        분리된 게이트 구조를 갖는 필드 스톱 IGBT의 전기적 특성에 관한 연구

        조형성,이장현,리긍연,강이구,HyeongSeong Jo,Jang Hyeon Lee,Kung Yen Lee,Ey Goo Kang 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.6

        In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 ㎛, and the on-state voltage drop was the lowest at 3.5 ㎛. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

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