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Thickness-dependent Resistance Switching in Cr-doped SrTiO3
김태광,두혜원,김민창,서순애,황인록,김연수,Jihoon Jeon,Sangik Lee,박배호 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.5
Thickness dependent bipolar resistance switching behavior was investigated on epitaxially grown Cr-doped SrTiO<SUB>3</SUB> (Cr-STO). All the pristine devices of different thickness show polarity independent symmetric current-voltage characteristic and the same space charge limited conduction mechanism. However, after a forming process the resultant conduction and switching phenomena are significantly disparate depending on the thickness of Cr-STO. The forming process itself is highly influenced by resistance values of each pristine device. Based on our results, we suggest that the resistance switching mechanism in Cr-STO is dependent not only on the insulating material composition or contact metal as previously reported but also on the initial resistance level determined by geometry and the quality of the insulating material. Bipolar resistance switching behavior in oxide material of different thickness exhibit mixed bulk and interface switching. This indicates that efforts in resistance based memory research should be focused on scalability or process method to control a given oxide material in addition to material type and device structure.