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Ga? 이온 빔 조사량에 따른 자기 조립 단분자막의 습식에칭 특성변화
노동선(Dong Sun Noh),김대은(Dea Eun Kim) 한국정밀공학회 2005 한국정밀공학회 학술발표대회 논문집 Vol.2005 No.10월
As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing for fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to Ga? ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and Ga? ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.