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고희석 SiH4 가스를 이용하여 증착한 저온 PECVD 실리콘 질화물 박막의 기계적, 전기적 특성연구
노길선 ( Kil Sun No ),금기수 ( Ki Su Keum ),홍완식 ( Wan Shick Hong ) 대한금속재료학회(구 대한금속학회) 2012 대한금속·재료학회지 Vol.50 No.8
We report on electrical and mechanical properties of silicon nitride (SiNx) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at 200℃ from SiH4 highly diluted in N2. The films were also prepared from SiH4 diluted in He for comparison. The N2 dilution was also effective in improving adhesion of the SiNx films, fascilitating construction of thin film transistors (TFTs). Metalinsulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the SiNx films from N2-diluted SiH4 were estimated to be 1×1013Ω · cm, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of 0.16 cm2/Vs, a threshold voltage of 3 V, a subthreshold slope of 1.2V/dec, and an on/off ratio of >106.
과량의 N2에 희석된 SiH4 가스를 이용한 150℃ 저온 PECVD 실리콘 질화물 박막의 물성이 TFT 소자 특성에 미치는 영향
노길선 ( Kil Sun No ),금기수 ( Ki Su Keum ),홍완식 ( Wan Shick Hong ) 대한금속재료학회(구 대한금속학회) 2013 대한금속·재료학회지 Vol.51 No.3
We report on the electrical properties of silicon nitride (SiNX) films deposited at 150℃ from highly diluted SiH4 in N2 by a plasma enhanced chemical vapor deposition (PECVD) method. The films were also prepared below 200℃ for comparison. Although the N2 dilution gas acted as a source of nitrogen atoms inside the SiNX film, it was necessary to introduce NH3 to obtain good dielectric quality in the low-temperature films. An amount of NH3 equal to the net SiH4 in the gas mixture was found to be adequate, and further addition of NH3 resulted in little improvement. For SiNX films deposited at 150℃, the NH3 addition decreased the C-V hysteresis (△Vth) from 15 V to 3 V, and increased the resistivity and the breakdown field strength from 109 Ωcm and 4 MV/cm to 1013 Ωcm and 7 MV/cm, respectively. When these films were applied as a gate dielectric layer, the resulting TFT prepared at 150℃ showed an on/off current ratio higher than 105, a threshold voltage of 1.1 V, a subthreshold slope of 1.2 V/dec, and a field effect mobility of 0.04 cm2/Vsec. Under a dc bias stress of VD = VG = 25 V, the on-current of this TFT was stable over a period of 5000 seconds.