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이지연,남태철,Lee, Ji-Yeon,Nam, Tae-Chul 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
A three branches vortical Hall sensor for detecting rotation angle of brushless motor has fabricated. The sensor is constructed three branches of $150{\mu}m$ width and $300{\mu}m$ distance from central electrode to Hall electrode. Each branch has one Hall output and one Hall input. The central electrode acts as common driving input. According to rotation angle change of brushless motor, sensor gives three position signals phase shifted by $120^{\circ}$. The sensitivity of sensor is 200V/A$\cdot$T at magnetic field of 0.1 T and constant driving current of 1mA. It has also showed three sine waves of Hall output voltages with $120^{\circ}$ phase over one motor rotation. The noise can limit sensor's resolution. We have measured sensor's noise characteristics. The detectable minimum magnetic field is $20{\mu}T$ at driving current 1mA, measured frequency 1 kHz and bandwidth$({\Delta}f)$ of 1Hz.
백경일,이상훈,남태철,Baek, Kyoung-Il,Lee, Sang-Hun,Nam, Tae-Chul 한국센서학회 1992 센서학회지 Vol.29 No.3
Hall 소자 및 OP-앰프의 장점을 동시에 살린 'Hall 소자를 이용한 자기연산증폭기'를 구성하였다. 이 자기연산증폭기는 높은 입력임피던스 회로와 두 신호의 차 신호를 하나의 신호로 변환하는 회로를 반드시 필요로 하고, 또 이것을 연산처리하기 위해 궤환 입력을 받아 들일 수 있어야 한다. 본 논문에서는 이러한 특성을 만족하는 새로운 '두 신호의 차 신호를 하나의 신호로 변환하는 연산증폭기(DSCOP)'를 제안하였다. 그리고 제안된 DSCOP와 Hall 소자를 이용하여 자기연산증폭기를 설계하여 그 특성을 시뮬레이션 하였으며, 실지로 시스템을 개별소자로 구성하여 측정하였다. We have constructed the magneto-operational amplifier(MOP) using the advantages of Hall device and an operational amplifier. The MOP necessarily requires a high impedance circuit, a differential-to-single-ended convert-sion circuit and feedback-input-element for operational amplifier characteristics. We have presented a new differential-to-single-ended conversion operational amplifier(DSCOP) having such characteristics. We have designed the MOP using the DSCOP and Hall device and simulated its characteristics, and finally we have constructed the system with discrete elements, and measured its magnetic characteristics.
김시헌,이철우,남태철 ( Si Hon Kim,Cheol Woo Lee,Tae Chul Nam ) 한국센서학회 1997 센서학회지 Vol.6 No.3
When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is 3.2 x 10⁴ V/A·T. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.
물리센서 / TMAH 에 의한 이방성 식각을 이용한 3차원 자기센서의 제작
정우철(Woo Chul Jung),남태철(Tae Chul Nam) 한국센서학회 1999 센서학회지 Vol.8 No.4
This paper will present an anisotropic etching in TMAH technique used in the fabrication of three-dimensional magnetic field vector sensor based on angled Hall plate structure. This sensor design relies on simultaneously detecting all magnetic field vector components using Hall plates that are imbedded into the silicon [111] sloped-surface of bulk micromachined cavity by the anisotropic etching of [100] silicon. The fabricated Hall elements has relatively improved sensitivity compare to convensional Hall elements for three-dimensional magnetic field sensing. The product sensitivity of 547V/AT at the supply current of 1.0mA was achived. The corresponding limit in the detection of magnrtic field is 0.076 that calculated by measured power spectral density(PSD) in magnetic sensor output..
백경일,이상훈,남태철 ( Kyoung Il Baek,Sang Hun Lee,Tae Chul Nam ) 한국센서학회 1992 센서학회지 Vol.1 No.1
We have constructed the magneto-operational amplifier(MOP) using the advantages of Hall device and an operational amplifier. The MOP necessarily requires a high impedance circuit, a differential-to-single-ended conversion circuit and feedback-input-element for operation; amplifier characteristics. We have presented a new differential-to-single-ended conversion operational amplifier(DSCOP) having such characteristics. We have designed the MOP using the DSCOP and Hall device anti simulated its characteristics, and finally we have constructed the system with discrete elements, and measured its magnetic characteristics.
김항규,신장규,정우철,남태철 ( Hang Kyoo Kim,Jang Kyoo Shin,Woo Chul Jung . Tae Chul Nam ) 한국센서학회 1994 센서학회지 Vol.3 No.1
A SIMOX SOI Hall sensor has been fabricated and its characteristics were measured at temperatures between 20℃ and 260℃. Output Hall voltage varied linearly with supplied current, showing good linearity. The Hall voltage and the offset voltage initially increased slightly and then decreased with temperature due possibly to the electron mobility variation with temperature. Nearly constant product sensitivity throughout the temperature range indicates that this Hall sensor could be used for high temperature applications.
김미목 ( Mi Mok Kim ),남태철 ( Tae Chul Nam ),이영태 ( Young Tae Lee ) 한국센서학회 2004 센서학회지 Vol.13 No.3
A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/SiO2/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over 120℃, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of 183.61iV/V kPa, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of 300℃.
김시헌,이철우,이정환,남태철 ( Si Hon Kim,Cheol Woo Lee,Jung Hwan Lee,Tae Chul Nam ) 한국센서학회 1998 센서학회지 Vol.7 No.1
We have simulated the operating characteristics of the magnetotransistor(MAGFET) by the finite element method and suggested the optimum design conditions to get a maximum sensitivity. The magnetotransistor has been fabricated by CMOS standard processing according to the suggested design conditions and investigated its electromagnetic characteristics. The sensitivity of the magnetatransistor depends on the ratio of width(W) to length(L) of active area rather than its size, and has a maximum when W/L = 1. The relative sensitivity of a fabricated magnetotransistor was 2.53%/T.