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컴퓨터 프로그래밍에 의한 이론적 임계미셀 농도 및 미셀화 영역의 산정에 관한 연구
김태영,조경행,최성옥,정노희,남기대 ( Tae Young Kim,Gyung Heung Cho,Seung Ok Choi,No Hee Jeong,Ki Dae Nam ) 한국유화학회 1997 한국응용과학기술학회지 Vol.14 No.3
Micellization range and cmc for the dilute aqueous solution of sucrose monoesters, that is, sucrose monolaurate, sucrose monomyristate, sucrose monopalmitate, sucrose monostearate and sucrose monooleate were investigated by computer programming. The extreme of the curvature of σ(C) as a new suggested method to determine the cmc and the micellization range was accomplished with computer programming. The values of cmc and micellization range can be obtained by the extreme of the curve by direct processing of only a few experimental data. The values of cmc particulary was in good agreement with those deduced intuitively from the shape of experimental curves of σ(C).
곽광수(Kwang Soo Kwack),연영흠(Young Heum Yoen),최성옥(Seung Ok Choi),정노희(Noh Hee Jeong),남기대(Ki Dae Nam) 한국유화학회 1999 한국응용과학기술학회지 Vol.16 No.1
N/A We used Cu as a representative of metals to be directly adsorbed on the bare Si surface and studied its removal DHF. DHF-H_2O_2 and BHF solution. It has been found that Cu ion in DHF adheres on every Si wafer surface that we used in our study (n, p, n+, p+) especially on the n+-Si surface. The DHF-H_2O_2 solution is found to be effective in removing metals featuring high electronegativity such as Cu from the p-Si and n-Si wafers. Even when the DHF-H_2O_2 solution has Cu ions at the concentration of 1ppm, the solution is found effective in cleaning the wafer. In the case the n+-Si and p+-Si wafers, however, their surfaces get contaminated with Cu When Cu ion of 10ppb remains in the DHF-H_2O_2 solution. When BHF is used, Cu in BHF is more likely to contaminate the n+-Si wafer. It is also revealed that the surfactant added to BHF improve wettability onto p-Si, n-Si and p+-Si wafer surface. This effect of the surfactant, however, is not observed on the n+-Si wafer and is increased when it is immersed in the DHF-H_2O_2 solution for 10min. The rate of the metallic contamination on the n+-Si wafer is found to be much higher than on the other Si wafers. In order to suppress the metallic contamination on every type of Si surface below 1010atoms/cm2, the metallic concentration in ultra pure water and high-purity DHF which is employed at metallic concentration in ultra pure water and high-purity DHF which is employed at the final stage of the cleaning process must be lowered below the part per trillion level. The DHF-H_2O_2 solution, however, degrades surface roughness on the substrate with the n+ and p+ surfaces. In order to remove metallic impurities on these surfaces, there is no choice at present but to use the NH_4OH-H_2O_2-H_2O and HCl-H_2O_2-H_2O cleaning.
권순일(Soun Il Kwan),정환경(Hwan Kyeong Jeong),최성옥(Seung Ok Choi),남기대(Ki Dae Nam) 한국유화학회 2001 한국응용과학기술학회지 Vol.18 No.2
N/A Curing reaction was carried out with the acrylic resin (ACR) [n-buty] acrylate/atyrene/2-hydroxyethyl methacrylate/acetoacetoxyethyl methacrylate (AAEM)] synthesized before and a curing agent, hexamethoxymethylmelamine (HMMM). With rotational rheometer, the effect of catalysts on curing rate of acrylic resin/melamine was examined. Among the four catalysts used, p-toluene sulfonic acid showed the highest reactivity, and the optimum amount of catalyst was 0.5 phr. It was observed that in the ACR/HMMM curing reaction, gelation point was lowered with the increasing the amount of AAEM and HMMM in the ACR.