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- 저자 : 김회철 ( Hoe Chul Kim ) (검색결과 1 건)
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김회철 ( Hoe Chul Kim ),김재정 ( Jae Jeong Kim ) 한국화학공학회 2016 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.54 No.6
Intensive researches have been focused on the 3-dimensional packaging technology using through silicon via (TSV) to overcome the limitation in Cu interconnection scaling. Void-free filling of TSV by the Cu electrodeposi-tion is required for the fabrication of reliable electronic devices. It is generally known that sufficient inhibition on the top and the sidewall of TSV, accompanying the selective Cu deposition on the bottom, enables the void-free bottom-up fill-ing. Organic additives contained in the electrolyte locally determine the deposition rate of Cu inside the TSV. Investi-gation on the additive chemistry is essential for understanding the filling mechanisms of TSV based on the effects of additives in the Cu electrodeposition process. In this review, we introduce various filling mechanisms suggested by ana-lyzing the additives effect, research on the three-additive system containing new levelers synthesized to increase effi-ciency of the filling process, and methods to improve the filling performance by modifying the functional groups of the additives or deposition mode.
ScienceON
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