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Hot wall epitaxy방법에 의한 AgInS<sub>2</sub> 박막의 성장과 광전류 특성
김혜숙,홍광준,정준우,방진주,김소형,정태수,박진성,Kim, H.S.,Hong, K.J.,Jeong, J.W.,Bang, J.J.,Kim, S.H.,Jeong, T.S.,Park, J.S. 한국재료학회 2002 한국재료학회지 Vol.12 No.7
A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.
$Cd_{1-x}Zn_{x}S$ 박막의 성장과 광전도 특성
이상열,홍광준,유상하,신용진,이관교,서상석,김혜숙,윤은희,김승욱,박향숙,신영진,정태수,신현길,김태성,문종대,이충일,전승룡,Lee, S.Y.,Hong, K.J.,You, S.H.,Shin, Y.J.,Lee, K.K.,Suh, S.S.,Kim, H.S.,Yun, E.H.,Kim, S.U.,Park, H.S.,Shin, Y.J.,Jeong, T.S.,Shin, 한국센서학회 1995 센서학회지 Vol.4 No.3
Chemical bath deposition(C.B.D.)방법으로 다결정 $Cd_{1-x}Zn_{x}S$ 박막을 스라이드 유리(coming-2948) 기판위에 성장시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. $550^{\circ}C$로 $N_{2}$ 속에서 열처리한 시료의 X-선 회절무늬로부터 외삽법으로 구한 격자상수는 CdS인 경우 $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$였으며 ZnS인 경우는 $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$였다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도 의존성을 연구하였다. 광전도 셀의 특성으로 스펙트럼응답 감도, 최대허용소비전력 및 응답시간을 측정하였다. Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.
에너지ㆍ환경 제반 시스템에 관한 수치해석적 연구(Ⅲ) : 싸이클론 전기집진기, 슬래깅 연소로, 연소로 냉간유동, 하이킹 오솔길, 폐수처리 반응조, JBR
장동순(D.S. Jang),박병수(B.S. Park),이은주(E.J. Lee),김복순(B.S. Kim),김영남(Y.N. Kim),김경미(K.M. Kim),김혜숙(H.S. Kim),신미수(M.S. Shin),도희준(H.J. Doh) 한국전산유체공학회 1996 한국전산유체공학회 학술대회논문집 Vol.1996 No.-
A seires of numerical calculations are performed on various energy and environmental systems, which include cyclonic electrostatic precipitator, slagging combustor, cold test furnace, the air movement in a hiking trail, wastewater reactor and jet bubbling reactor for SQx removal. A control-volume based finite-difference method by Patankar is employed together with the SIMPLEC algorithm. The standard two-equation and RNG k-ε turbulence models are implemented for Reynolds stress. Further, a simplified eddy breakup model is incorporated for two-phase coal combustion. Calculated results are presented briefly together with the summary of the important physics of each system.
이상열,홍광준,유상하,신용진,이관교,서상석,김혜숙,윤은희,김승욱,박향숙,신영진,정태수,신현길,김택성,문종대,이충일,전승룡 ( S . Y . Lee,K . J . Hong,S . G . You,Y . j . Shin,K . K . See,S . S . Suh,H . S . Kim,E . H . Yun,S . U . Kim,H . S . Park,Y . 센서 한국센서학회 1995 센서학회지 Vol.4 No.3
Polycrystalline Cd_(1-x)Zn_xS thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometor in order to study Cd_(1-x)Zn_xS polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in N₂ gas at 550 ℃. It was found hexagonal structure which had the lattice constant a_o = 4.1364Å, c_o=6.7129Å in CdS and a_o = 3.8062Å, c_o = 6.2681 Å in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample
HWE 방법에 의한 CdSe 박막 성장과 광전기적 특성
홍광준,이관교,이상열,유상하,신용진,서상석,정준우,정경아,신영진,정태수,김택성,문종대,김혜숙 ( K . J . Hong,K . K . Lee,S . Y . Lee,S . H . You,Y . J . Shin,S . S . Suh,J . W . Jeong,K . A . Jeong,Y . J . Shin,T . S . Jeong,T . S . Kim,J . D 한국센서학회 1997 센서학회지 Vol.6 No.4
The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are 600? and 430 respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(γ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.39 X 10^7, the MAPD of 335mW, and the rise and decay time of l0ms and 9.5ms, respectively
CBD 방법에 의한 CdS1-xSex 박막의 열처리에 따른 광전기적 특성
문종대,정태수,신현길,김택성,신영진 ( Y . J . Shin ),홍광준 ( K . J . Hong ),유상하 ( S . H . You ),서상석 ( S . S . Suh ),최승평 ( S . P . Choi ),이상열 ( S. Y . Lee ),신용진 ( Y . J . Shin ),이관교 ( K . K . Lee ),김혜숙 ( H . S . Kim ),윤 한국센서학회 1995 센서학회지 Vol.4 No.1
Polycrystalline CdS_(1-x)Se_x, thin films were grown on ceramic substrate using a chemical bath deposition method. They ere annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS_(1-x)Se_x, polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS. CdSe samples annealed in gas at a 0 it was found hexagonal structure which had the lattice constant a_0=-4.1364Å, c_0=6.7129Å in CdS and a_0=4.3021Å, c_0=7.3021Å in CdSe. respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(γ), maximum allowable power dissipation and response time on these samples.