http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
비대칭 마그네트론 스퍼터로 증착된 비정질 탄소박막의 트라이볼로지 특성에서 CrC 삽입층 효과에 대한 연구
김필중,박용섭,Kim, Phil Jung,Park, Yong Seob 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.7
We investigated the tribological properties of amorphous carbon (a-C) films deposited with CrC interlayers of various thicknesses as the adhesive layer. A-C and CrC thin films were deposited using the unbalanced magnetron (UBM) sputtering method with graphite and chromium as the targets. CrC films as the interlayer were fabricated under a-C films, and various structural, surface, and tribological properties of a-C films deposited with various CrC interlayer thicknesses were investigated. With various CrC interlayer thicknesses under a-C films, the tribological properties of CrC/a-C films were improved; the increased film thickness exhibited a maximum high hardness of over 27.5 GPa, high elastic modulus of over 242 GPa, critical load of 31 N, residual stress of 1.85 GPa, and a smooth surface below 0.09 nm at the condition of 30-nm CrC thickness.
고집적 메모리의 yield 개선을 위한 전기적 구제회로
김필중,김종빈 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.4
Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.
프로그램 가능한 논리 회로 구성을 위한 PIP 앤티퓨즈의 전기적 특성
김필중,윤중현,김종빈 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.12
The antifuse is a semi-permanent memory device like a ROM which shows the open or short state, and a switch device connecting logic blocks selectively in FPGA. In addition, the antifuse has been used as a logic device to troubleshoot defective memory cells arising from SDRAM processing. In this study, we have fabricated ONO antifuses consisted of PIP structure. The antifuse shows a high resistance more than several G Ω in the normal state, and shows a low resistance less than 500 Ω after program. The program resistance variation according to temperature shows the very stable value of $\pm$20 Ω. At this time, its program voltage shows 6.7∼7.2 V and the program is performed within 1 second. Therefore this result shows that the PIP antifuse is a very stable and programmable logic device.
김필중,김상하 충남대학교 기초과학연구소 1996 忠南科學硏究誌 Vol.23 No.2
Good performance of the data link layer which is using sliding window protocol requires selection of optimal timeout duration. Timeout duration can be selected based on RTT. But, due to the variable environmental factors of channels, selection of optimal timeout duration is not easy task. This paper suggests additional method that can be used to identify frame loss even before timeout occurs. Using this additional method(called Fast Retransmission method), sender detects transmission error on a certain frame early and retransmits the frame immediately without further waiting for timeout event. This method loosen up the requirement of stringent timeout value on data link layer and gives the performance quite closed to the one that can be obtained with optimal timeout value.
반도체 메모리에 사용되는 전압발생기의 펌핑 커패시터 개선
김필중,구대성,윤중현,김종빈 조선대학교 전자정보통신연구소 2002 電子情報通信硏究所論文誌 Vol.5 No.1
In semiconductor memory, the kinds of voltage generator are high voltage generator, negative voltage generator, drain voltage generator and etc. The relevant circuits supported voltage generator, are clock generator, sense amplifier, voltage regulator and etc. The voltage generator consists of MOS diodes and MOS capacitors. To get the out voltage with sufficient charge, the MOS capacitors are big size. These MOS transistors can be adapted only on the EEPROM process. Thus, in this study, we designed stacked metal capacitor. This capacitor is small size bat can get capacitance. This capacitor is designed to comb type using metal-line and poly-line. The size of designed capacitor is 208×52 ㎛2 and the capacitance is about 4pF. The stacked metal capacitor can get much capacitance of 5~6 times than single plane capacitor. Also this capacitor will be easy adapted in sub-micro process technology of semiconductor memory. And this capacitor can be adapted on all memory process.
화일 정보를 효율적으로 제공하는 화일 화인더의 구조 설계
김필중,김상하 충남대학교 기초과학연구소 1995 忠南科學硏究誌 Vol.22 No.1
One of the most compelling problems facing local area networks is the location information of resources on the networks. This paper explores the network architecture of file finders which is suitable for retrieving the resource information efficiently. Each network file finder is composed of four functions: registration, management, retrieval, and network functions. The communication between network file finders may be required to get the correct resource information because all informations are distributed over them. This may cause the loop problem in which the service request may be routed to the request generator itself. This problem could be sloved by the spanning tree method in this paper.