PE 필름 두께와 온도에 따른 ‘상감둥시’ 감의 MAP 탈삽 효과

김일호,김지영,남현진,이기우,조두현,이용재 한국식품저장유통학회 2017 한국식품저장유통학회지 Vol. No.

We investigated the effect of PE film thickness on the modified atmosphere packaging (MAP) deastringency of ‘Sanggamdungsi’ (Diospyros kaki cv.) astringent persimmon at room temperature (25℃) and low temperature (-1℃). The fruits were individually packaged with PE film of which the thickness is 60, 80, 100, 115 or 130 μm and stored at room or low (-1℃) temperature. At room temperature, firmness shows the highest value (23.3-26.5) at 100 μm thickness. Top flesh browning and decay was monitored at 20 days after storage, and peel blackening and style-end softening was negligible at optimal thickness. Therefore, optimal film thickness of deastringency at room temperature is 80-100 μm. At this thickness, the astringency was removed after 5 days and the fruits can be distributed until 10 days after the MAP. At low (-1℃) temperature, firmness was maintained regardless of film thickness. However, the firmness is higher as the film is thicker. Top flesh browning and decay was not occurred even after 90 days after storage. Peel blackening and style-end softening was monitored at 90 days after storage. Off-flavor was monitored at 115 and 130 μm thickness. Therefore, optimal film thickness of deastringency at low (-1℃) temperature is 80-100 μm. At this thickness, the astringency was removed after 50 days and the fruits can be distributed until 80 days after the MAP.

자유연제발표 : 세션1 ; 여성의 일과 건강

김일호,천희란 한국보건행정학회 2008 한국보건행정학회 학술대회 논문집 Vol.2008 No.2

냉장고엘리베이트 외 1편

김일호 계간 서정시학 2019 서정시학 Vol.29 No.1

(Bi, Sb)₂(Te, Se)₃계 열전 바막/후막 모듈 특성에 미치는 제조 변수의 영향

金逸昊 충주대 산업과학기술연구소 2001 産業科學論文集 Vol.9 No.-

For the (Bi, Sb)2(Te, Se)3-based thin film thermoelectric modules fabricated by the flash evaporation technique, the effects of film thickness and the number of p/n couples on the cooling performance of the modules were investigated. Maximum temperature difference generated by the module was increased with the film thickness for a given number of p/n couple, but it was not changed much with the number of couples for the case of fixed thickness of film. The effect of film thickness and the number of couples on the cooling performance could be understood by taking account of complex effects on maximum temperature difference. It was found that the consideration of extra heat term was important for thin film modules, in addition to Peltier and Joule effects. Through the attempt for the preparation of thick films, it was found that some complementary process was required to solve compositional and structural inhomogeneity after thermal spraying.

고/액 계면에서의 Peltier 열 측정 및 결정성장에의 응용 II : 측정과 응용

김일호,장경욱,이동희,Kim, Il-Ho,Jang, Kyung-Wook,Lee, Dong-Hi 한국재료학회 1999 한국재료학회지 Vol.9 No.11

$\textrm{Bi}_{2}\textrm{Te}_{3}$의 고/액 계면을 통하여 전류밀도와 방향을 달리 하면서 통전시켰을 때 발생하는 고상, 액상 및 고/액 계면에서의 미소 온도변화를 측정하였다. 이 냉각(가열) 효과는 전류밀도, 통전방향 및 시간에 따라 다르게 나타났으며, 온도변화에 미치는 Peltier 열, Thomson 열 및 Joule 열의 영향을 이론 및 실험에 의해 각각 분류하였다. $\textrm{Bi}_{2}\textrm{Te}_{3}$의 고/액상간의 Peltier 계수는 -1.10$\times\textrm{10}^{-1}$V이었으며, 고상과 액상의 Thomson 계수는 각각 7.31\times\textrm{10}^{-4}V/K와 5.77\times\textrm{10}^{-5}V/K이었다. 직류를 통전하면서 Bi$_2$Te$_3$결정을 성장한 결과, 고상에서 액상으로 통전한 경우, Peltier 냉각에 의한 온도구배의 상승으로 방향성이 향상된 결정을 얻을 수 있었지만, 전류의 방향을 반대로 하면, 결정성 향상에 별 도움을 주지 못하였다. Thermoelectric effects on the temperature changes at the solid- and liquid-phase and its interface were studied by using the unidirectional solidification of $\textrm{Bi}_{2}\textrm{Te}_{3}$. Cooling or heating effects measured with current density. polarity and current passing time were quite different. By separating sole Peltier, Thomson and Joule heat theoretically and experimentally, the Peltier coefficient at the solid/liquid interface of $\textrm{Bi}_{2}\textrm{Te}_{3}$ was -1.10$\times\textrm{10}^{-1}$V, and the Thomson coefficients of solid- and liquid-phase were 7.31\times\textrm{10}^{-4}V/K, 5.77\times\textrm{10}^{-5}V/K, respectively. When D.C. passed from solid-phase to liquid-phase during the crystal growth of $\textrm{Bi}_{2}\textrm{Te}_{3}$ the crystal with more directionality was obtained owing to increase of the temperature gradient in liquid by the Peltier cooling. But in reverse current direction, the crystallinity was not changed significantly.

Chalcogenide계 열전재료

김일호,Kim, Il-Ho 한국전기전자재료학회 2011 전기전자재료 Vol.24 No.7

현재 개발 중인 Chalcogenide계 열전재료 중에서, 이방성 재료인 Thallium chalcogenide, Alkalimetal bismuth chalcogenide, Bismuth telluride와 등방성 재료인 Lead telluride, Silver antimony telluride, TAGS, LAST 및 SALT를 소개하였고, 이 재료들에 대한 연구 동향을 살펴보았다. Chalcogenide는 S, Se, Te 및 다른 원소와의 다양한 조합에 의해, 넓은 온도범위에서 열전재료로 응용하기 위한 밴드갭 에너지의 조절이 가능하다. 또한 합성공정에 따른 상변태, 석출 등 구조변화에 따른 열전특성의 변화를 기대할 수 있어 열전재료 개발 초기부터 활발한 연구가 진행되어 왔다. 과거의 전통적인 Chalcogenide계 열전재료뿐만 아니라, Chalcogenide계 열전 신소재에 대해서도 살펴보았다. Chalcogenide는 전자적, 광학적, 열적 성질 등 특성이 독특하고 변화가 무궁무진하여 아주 매력적이기 때문에, 앞으로도 계속 열전재료로서 각광받는 물질군으로 판단된다. 그림 11에 현재까지 ZT의 최댓값이 1이 넘는다고 보고된 열전재료의 성능지수를 요약하였다.

PE 필름 두께와 온도에 따른 '상감둥시' 감의 MAP 탈삽 효과

김일호,김지영,남현진,이기우,조두현,이용재,Kim, Il-Ho,Kim, Ji-Young,Nam, Hyun-Jin,Lee, Ki-U,Cho, Doo-Hyun,Lee, Yong-Jae 한국식품저장유통학회 2017 한국식품저장유통학회지 Vol.24 No.6

상온($25^{\circ}C$)과 저온($-1^{\circ}C$)에서 modified atmosphere packaging(MAP)를 이용한 '상감둥시' 감의 탈삽처리를 통하여 각 온도에서 PE 필름의 적정 두께를 구명하고자 하였다. 60(상온에서만 사용), 80, 100, 115, $130{\mu}m$ 두께의 PE 필름을 이용하여 낱개 진공포장 후 각각 상온과 저온에서 탈삽하였다. 상온에서 탈삽은 필름 두께가 두꺼울수록 속도가 빠른 경향이었으나 모든 처리구에서 두께에 관계없이 5일 만에 식용이 가능한 상태로 탈삽되었다. 경도는 모든 처리구에서 비교적 높게 유지되었다. 과육갈변(top flesh browning)과 부패는 20일에 발생되었으며 과피흑변(peel blackening)과 과정부연화(style-end softening)는 적정 두께에서 거의 문제 되지 않았다. 상온 MAP 탈삽의 적정 PE 필름 두께는 $80-100{\mu}m$로, 이 두께에서 5일만에 탈삽되어 10일까지 상품성을 유지한 유통이 가능한 것으로 판단되었다. 저온에서의 탈삽도 필름 두께가 두꺼울수록 속도가 빨랐으며 50일경에 두께에 관계없이 완전히 탈삽되었다. 경도는 필름 두께에 따른 큰 차이는 없었으나 두꺼울수록 높은 경향을 보였다. 과육갈변과 부패는 필름 두께와 관계없이 모든 처리구에서 90일까지 발생되지 않았다. 과피흑변과 과정부연화는 90일에 발생되었으며 115와 $130{\mu}m$ 두께에서 이취가 발생되었다. 저온 MAP 탈삽의 적정 PE 필름 두께는 $80-100{\mu}m$로, 이 두께에서 50일만에 탈삽되어 80일까지 상품성을 유지한 유통이 가능한 것으로 판단되었다 We investigated the effect of PE film thickness on the modified atmosphere packaging (MAP) deastringency of 'Sanggamdungsi' (Diospyros kaki cv.) astringent persimmon at room temperature ($25^{\circ}C$) and low temperature ($-1^{\circ}C$). The fruits were individually packaged with PE film of which the thickness is 60, 80, 100, 115 or $130{\mu}m$ and stored at room or low ($-1^{\circ}C$) temperature. At room temperature, firmness shows the highest value (23.3-26.5) at $100{\mu}m$ thickness. Top flesh browning and decay was monitored at 20 days after storage, and peel blackening and style-end softening was negligible at optimal thickness. Therefore, optimal film thickness of deastringency at room temperature is $80-100{\mu}m$. At this thickness, the astringency was removed after 5 days and the fruits can be distributed until 10 days after the MAP. At low ($-1^{\circ}C$) temperature, firmness was maintained regardless of film thickness. However, the firmness is higher as the film is thicker. Top flesh browning and decay was not occurred even after 90 days after storage. Peel blackening and style-end softening was monitored at 90 days after storage. Off-flavor was monitored at 115 and $130{\mu}m$ thickness. Therefore, optimal film thickness of deastringency at low ($-1^{\circ}C$) temperature is $80-100{\mu}m$. At this thickness, the astringency was removed after 50 days and the fruits can be distributed until 80 days after the MAP.

하수도 악취 관리를 위한 Test-bed 구축 및 운영계획

김일호,송호면,지현욱 대한환경공학회 2017 대한환경공학회 학술발표논문집 Vol.2017 No.11

Thermoelectric Properties of CoSb3-ySny Skutterudites Prepared by Hot Pressing

김일호,어순철 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

Sn-doped CoSb3 skutterudites (CoSb3-ySny) were prepared by hot pressing and their thermo-electric properties were examined. Single-phase δ-Co(Sb,Sn)3 was successfully obtained, but when the y was larger than 0.3, the γ-Co(Sb,Sn)2 phase was observed. The Seebeck coefficient of all the Sn-doped CoSb3 showed a positive value and the electrical resistivity was drastically decreased by Sn doping. This implies that Sn atoms successfully acted as electron acceptors by substituting for Sb atoms. The thermal conductivity was considerably reduced by Sn doping due to phonon scattering. The dimensionless thermoelectric figure of merit was improved by Sn doping and it was closely related to the phase transition and dopant activation. We found that the optimum composition for the Sn-doped CoSb3 was CoSb2:8Sn0:2. Sn-doped CoSb3 skutterudites (CoSb3-ySny) were prepared by hot pressing and their thermo-electric properties were examined. Single-phase δ-Co(Sb,Sn)3 was successfully obtained, but when the y was larger than 0.3, the γ-Co(Sb,Sn)2 phase was observed. The Seebeck coefficient of all the Sn-doped CoSb3 showed a positive value and the electrical resistivity was drastically decreased by Sn doping. This implies that Sn atoms successfully acted as electron acceptors by substituting for Sb atoms. The thermal conductivity was considerably reduced by Sn doping due to phonon scattering. The dimensionless thermoelectric figure of merit was improved by Sn doping and it was closely related to the phase transition and dopant activation. We found that the optimum composition for the Sn-doped CoSb3 was CoSb2:8Sn0:2.

Bi - Te - Sb 계 열전박막소자의 제조와 특성

김일호,이동희 한국진공학회 1993 한국진공학회 학술발표회초록집 Vol.- No.-