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표면탄성파 소자 응용을 위한 $LiTaO_3$ 단결정 성장
정대식,노용래,박병학,김유성,Chung, D.S.,Roh, Y.R.,Park, B.H.,Kim, Y.S. 한국결정성장학회 1994 한국결정성장학회지 Vol.4 No.2
표면탄성파 소자응요을 위하여 완전용융조성, 48.65 mole % $Li_2O에서 LiTaO_3(LT)$ 단결정(Y, X-axis)을 육성하였다. 육성된 $LiTaO_3(LT)$ 단결정의 SAW 소자성능을 확인하기 위하여 photolithography를 거쳐 기본적인 SAW filter를 제작하였다. Yamaju LT Y-cut 단결정 기판과 본 연구에서 제작된 RIST LT Y-cut 단결정 기판에서의 SAW특성결과를 비교하여 성능을 결정하였다. Yamaju LT 기판에서보다 본 연구에서 육성된 LT 단결정 기판에서 우수한 SAW 성능을 보였다. $LiTaO_3 (LT)$ single crystals (Y, X-axis) were grown from the congruent composition, 48.65 mole %, $Li_2O$ for SAW (Surface Acoustic Wave) applications. Basic SAW filters were fabricated on the RIST prepared LT wafers (Y-cut) using phtolithography. SAW filter performance was evaluated. The results were compared of the SAW characteristics between RIST prepared LT wafer (Y-cut) and commercial Yamaju wafer (Y-cut). The SAW filter prepared on the RIST grown LT wafer was shown better SAW performances than that of Yamaju wafer.
증착 후 열처리 온도에 따른 In2O3 박막의 구조적, 전기적, 광학적 특성 변화
이영진 ( Y. J. Lee ),이학민 ( H. M. Lee ),허성보 ( S. B. Heo ),김유성 ( Y. S. Kim ),채주현 ( J. H. Chae ),공영민 ( Y. M. Kong ),김대일 ( Dae Il Kim ) 한국열처리공학회 2011 熱處理工學會誌 Vol.24 No.6
We have investigated the structural, electrical and optical properties of In2 O3 thin films deposited by RF magnetron sputtering and then annealed at 150℃ and 300℃ in vacuum. The structural and electrical properties are strongly related to annealing temperature. All the annealed In2O3 films are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at 300℃. The sheet resistance decreases with a increase in annealing temperature and In2O3 film annealed at 300℃ shows the lowest sheet resistance of 174 Ω/□. The optical transmittance of In2O3 films in a visible wavelength region also depends on the annealing temperature. The films annealed at 300℃ show higher transmittance of 76% than those of the films prepared in this study. (Received September 27, 2011; Revised October 14, 2011; Accepted October 20, 2011)