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- 저자 : 김용주(Yoong Ju Kim) (검색결과 2 건)
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김용주(Kim, Yoong-Ju),서정렬(Suh, Jeong-Yeal) 한국주거환경학회 2013 주거환경(한국주거환경학회논문집) Vol.11 No.1
This study focuses on the research for the future housing preferences of the baby boomers in Korea. The baby boomer generation in Korea means people who were born from 1955 to 1963. When they will be old in around 2020 it is expected that we will face serious social and economic problems. Though they will be directly affected due to aging they are not ready for this. This study is analyzed for the baby boomer generation in Busan living in their current housing status, housing preferences and future housing preferences and these clustering characteristics by groups are identified. As a result of dividing into groups they are classified into four categories: Location preferences, Social preferences, Economic preferences and Physical preferences. Therefore, the following conclusions were derived. First, their housing will be provided depending on the nature of different forms of housing they want according to preferred residential communities of affinity. In other words when formulating housing policy, locations, economics and physics will be well equipped. Second, Baby boomers in Busan tend to prefer detached house strongly and it is thought that they need the favorite housing land supply with location and affordability. Third, the favorite residential area tends to reduce rather than current residential area generally. In general, since people prefer the current 20 pyeonghyeongdae (more than 66 ㎡ ~ 99 ㎡ or less) and 30 pyeonghyeongdae (100 ㎡ ~ 132 ㎡ or less) a lot, in preparation for this the supply of housing will be necessary. Finally, even though most baby boomers prefer detached house and apartments, due to several constraints urban life, housing, welfare homes for the elderly, detached house , condominium, townhouse, and a variety of phenomena are shown realistically.
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a - Si의 contact hole 수의 증가에 따른 MIM antifuse의 전기적 특성
이상기(Sang Gi Lee),김용주(Yoong Ju Kim),임원택(Won Taeg Lim),이동윤(Dong Yun Lee),권오경(Oh Kyong Kwon),이창효(Chang Hyo Lee) 한국진공학회(ASCT) 1995 Applied Science and Convergence Technology Vol.4 No.1
물성을 달리한 α-Si을 사용하여 MIM(Metal-Insulator-Metal) 구조의 antifuse들을 제작하고, 물성의 변화에 따른 전기적 특성의 변화를 조사하였다. α-Si은 PECVD(Plasma Enhanced Chemical Vapor Deposition)방법으로 증착하였으며, 물성은 RF power를 달리하여 변화시켰다. α-Si MIM 구조의 antifuse를 프로그램할 때 생기는 failure rate를 줄이기 위해 전극 사이에 삽입되는 α-Si의 contact hole 크기와 갯수를 변화시켜 보았다. MIM antifuse는 contact hole이 2개 이상일 때 failure rate가 10% 이내로 줄었으며, 프로그래밍 전류는 거의 변화가 없었다. 항복전압은 10-11V 범위에 집중적으로 분포하였으며, 5V에서의 누설전류는 contact hole의 수가 증가함에 따라 커짐을 알았다. We fabricate MIM antifuses with α-Si and investigate the electrical characteristics of the antifuses. α-Si is deposited by PECVD at various RF power to vary the properties of α-Si. To decrease the failure rate of α-Si MIM antifuse, we change α-Si MIM antifuse structure with the contact hole size and the number of holes. The failure rate is limited to about 10% above 2-contact holes and programming current is nearly constant. We find that the breakdown voltage density is high at 10 to 11V, while the leakage current increases with contact hole numbers at 5V.
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