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Ni-Zn 레독스 플로우 전지에 있어서 양극의 전기화학적 특성에 미치는 쉬트 형상의 Ni 나노분말 첨가 효과
석혜원,김세기,강양구,홍연우,이영진,김범수,주병권,Seok, Hye-Won,Kim, Sei-Ki,Kang, Yang-Koo,Hong, Yeon-Woo,Lee, Young-Jin,Kim, Beom-Su,Ju, Byeong-Kwon 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.9
3 mol% Co-added $Ni(OH)_2$ fine powders, which showed ${\beta}$-phase, as positive electrode materials have been fabricated using $NiSO_4{\cdot}6H_2O$ aqueous solution by ultrasonic spray-chemical precipitation and subsequent hydrothermal method, and sheet-like Ni nanopowder was fabricated by mechano-chemical reduction method. The addition effects of the sheet-like Ni nanopowder on the electrochemical properties of the positive electrode in Ni-Zn Redox flow battery were investigated. Impedance spectroscopy revealed that the addition of the sheet-like Ni nanopowder resulted in decrease in the electrical resistivity; 10 wt.% addition reduced the electrical properties by a fifth. Cyclic voltammetry showed the addition of the sheet-like Ni nanopowder resulted in decrease in the potential difference of oxidation and reduction; this means the increase in the reversability for electrode reduction. Charge/discharge measurement confirmed that the addition of the sheet-like Ni nanopowder resulted in the increase in the discharge efficiency.
반응성 RF 마그네트론 스퍼터링에 의한 AlN 박막 제조 및 유압 감지 특성
석혜원,김세기,강양구,홍연우,이영진,주병권,Seok, Hye-Won,Kim, Sei-Ki,Kang, Yang-Koo,Hong, Yeon-Woo,Lee, Young-Jin,Ju, Byeong-Kwon 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.12
Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.
RF Magnetron Sputtering을 이용하여 제작한 불용성 촉매전극의 해수전기분해 특성
이현석,김세기,석혜원,김진호,최헌진,정하익,Lee, Hyun-Seok,Kim, Sei-Ki,Seok, Hye-Won,Kim, Jin-Ho,Choi, Hun-Jin,Jung, Ha-Ik 한국재료학회 2012 한국재료학회지 Vol.22 No.2
Insoluble catalytic electrodes were fabricated by RF magnetron sputtering of Pt on Ti substrates and the performance of seawater electrolysis was compared in these electrodes to that is DSA electrodes. The Pt-sputtered insoluble catalytic electrodes were nearly 150 nm-thick with a roughness of $0.18{\mu}m$, which is 1/660 and 1/12 of these values for the DSA (dimensionally stable anodes) electrodes. The seawater electrolysis performance levels were determined through measurements of the NaOCl concentration, which was the main reaction product after electrolysis using artificial seawater. The NaOCl concentration after 2 h of electrolysis with artificial seawater, which has 3.5% NaCl normally, at current densities of 50, 80 and 140 mA/$cm^2$ were 0.76%, 1.06%, and 2.03%, respectively. A higher current density applied through the electrodes led to higher electrolysis efficiency. The efficiency reached nearly 58% in the Pt-sputtered samples after 2 h of electrolysis. The reaction efficiency of DSA showed higher values than that of the Pt-sputtered insoluble catalytic electrodes. One plausible reason for this is the higher specific surface area of the DSA electrodes; the surface cracks of the DSAs resulted in a higher specific surface area and higher reaction sites. Upon the electrolysis process, some Mg- and Ca-hydroxides, which were minor components in the artificial seawater, were deposited onto the surface of the electrodes, resulting in an increase in the electrical resistances of the electrodes. However, the extent of the increase ranged from 4% to 7% within an electrolysis time of 720 h.
GNP법에 의해 합성한 (La<sub>1-x</sub>Sr<sub>x</sub>)Mn<sub>1+y</sub>O<sub>3−δ</sub> 분말의 출발물질에 따른 특성
이미재,김세기,지미정,최병현,박상선,이경희,Lee, Mi-Jai,Kim, Sei-Ki,Jee, Mi-Jung,Choi, Byung-Hyun,Park, Sang-Sun,Lee, Kyung-Hee 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.1
We synthesized $(La_{1-x}Sr_x)MnO_3$ as a cathode for SOFC by glycine nitrate process (GNP) and knew the different properties of $(La_{1-x}Sr_x)MnO_3$ by using nitrate solution and oxide solution as a starting material. In case of using nitrate solution as a starting material, main crystal phase peak of $LaMnO_3$ increased as Sr content added up and a peak of $Sr_2MnO_4\;and\;La_2O_3$ was showed as a secondary phase. We added Mn excess to control a crystal phase. In this case, the electrical conductivity had a high value 210.3 S/cm at $700^{\circ}C$. On the other side, when we used oxide solution as a starting material, we found main crystal phase of $LaMnO_3$ to increase as Sr content added up and a peak of $La_2O_3$ as a secondary phase. Similary, we added Mn excess to control a crystal phase in this case. We knew $(La,Sr)MnO_3$ powder to sinter well and the electrical conductivity of the sintered body at $1200^{\circ}C$ for 4 h was 152.7 S/cm at $700^{\circ}C$. The sintered $(La,Sr)MnO_3$ powder at $1000^{\circ}C$ for 4 h got the deoxidization peak, depending on the temperature and in case of using nitrate solution as a starting material, the deoxidization peak was showed at $450^{\circ}C$ which is lower than used a oxide solution as a starting material. As a result, when $(La,Sr)MnO_3$ powder was synthesized to add Mn excess and to use nitrate solution as a starting material, we found it to have the higher deoxidization property and considered it as a cathode for SOFC properly. And we found it to have different electrical conductivity the synthesized $(La,Sr)MnO_3$ powder by using different starting materials like nitrate solution and oxide solution which influence a sintering density and crystal phase.
RF 마그네트론 스퍼터링을 이용한 p 타입 투명전도 산화물 SrCu<sub>2</sub>O<sub>2</sub> 박막의 제조
석혜원,김세기,이현석,임태영,황종희,최덕균,Seok, Hye-Won,Kim, Sei-Ki,Lee, Hyun-Seok,Lim, Tae-Young,Hwang, Jong-Hee,Choi, Duck-Kyun 한국재료학회 2010 한국재료학회지 Vol.20 No.12
Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.
홍연우,이영진,김세기,김진호,Hong, Youn-Woo,Lee, Young-Jin,Kim, Sei-Ki,Kim, Jin-Ho 한국재료학회 2012 한국재료학회지 Vol.22 No.12
We have examined the co-doping effects of 1/2 mol% NiO and 1/4 mol% $Cr_2O_3$ (Ni:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Ni,Cr-doped ZBS, ZBS(NiCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were detected for all of compositions. For the sample with Sb/Bi = 1.0, the Pyrochlore was decomposed and promoted densification at lower temperature by Ni rather than by Cr. A homogeneous microstructure was obtained for all of the samples affected by ${\alpha}$-spinel. The varistor characteristics were not dramatically improved (non-linear coefficient, ${\alpha}$ = 5~24), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.17 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to have been divided into two types, i.e., one is tentatively assigned to ZnO/$Bi_2O_3$ (Ni,Cr)/ZnO (0.98 eV) and the other is assigned to a ZnO/ZnO (~1.5 eV) homojunction.
홍연우,이영진,김세기,김진호,Hong, Youn-Woo,Lee, Young-Jin,Kim, Sei-Ki,Kim, Jin-Ho 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.1
In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.
홍연우,이영진,김세기,김진호,Hong, Youn-Woo,Lee, Young-Jin,Kim, Sei-Ki,Kim, Jin-Ho 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.11
In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.
Na 및 K 치환에 따른 BaTiO<sub>3</sub>의 Positive Temperature Coefficient Resistor 특성
이미재,임태영,김세기,황종희,김진호,서원선,Lee, Mi-Jai,Lim, Tae-Young,Kim, Sei-Ki,Hwang, Jong-Hee,Kim, Jin-Ho,Seo, Won-Seon 한국재료학회 2010 한국재료학회지 Vol.20 No.12
The influences of Na and K content on the crystal phase, the microstructure and the electrical property of $BaTiO_3$-based thermistors was found to show typical PTC effects. The crystal phase of powder calcined at $1000^{\circ}C$ for 4hrs showed a single phase with $BaTiO_3$, and the crystal structure was transformed from tetragonal to cubic phase according to added amounts of Na and K. In XRD results at $43^{\circ}\sim47^{\circ}$, the $(Ba_{0.858}Na_{0.071}K_{0.071})(Ti_{0.9985}Nb_{0.0015})O_{3-\delta}$ showed (002) and (200) peaks but the $(Ba_{0.762}Na_{0.119}K_{0.119})(Ti_{0.9975}Nb_{0.0025})O_{3-\delta}$ showed (002), (020) and (200) peaks. In sintered bodies, those calcined at $600^{\circ}C$ rather than at $1000^{\circ}C$ were dense, and for certain amounts of Na and K showed rapid decreases in grain size. In relative permittivity, the curie temperature due to the transformation of ferroelectric phase rose with added Na and K but decreased in terms of relative permittivity. In the result of the R-T curve, the sintered bodies have curie temperatures of about $140^{\circ}C$ and the resistivity of sintered bodies have scores of $\Omega{\cdot}cm$; the jump order of sintered bodies was shown to be more than $10^4$ in powder calcined at $1000^{\circ}C$.