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김도진,C. G. Kim,C. S. Kim,D. Djayaprawira,H. Kim,H. C. Lee,J. B. Park,K. H. Kim,K. J. Lee,M. Takahashi,S. H. Yoo,Y. E. Ihm 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et$_2$Ga(N$_3$)NH$_2$CH$_3$. The growth surface was monitored {\it in-situ} by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity $\sim$ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.
GaMnAs의 Be 병행 도핑에 의한 자기 수송 특성 연구
임완순,윤대식,우부성,고존서,김도진,임영언,김효진,김창수,김종오,Im W. S.,Yoon T. S.,Yu F. C.,Gao C. X.,Kim D. J.,Ibm Y. E.,Kim H. J.,Kim C. S.,Kim C. O. 한국재료학회 2005 한국재료학회지 Vol.15 No.1
Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.
임완순,조경철,조유석,최규석,김도진,Im, W.S.,Cho, K.C.,Cho, Y.S.,Choi, G.S.,Kim, D.J. 한국재료학회 2003 한국재료학회지 Vol.13 No.9
Anodic aluminum oxide (AAO) membrane was made of aluminum sheet (99.6%, 0.2 mm thickness). The regular array of hexagonal nano pores or channels were prepared by two step anodization process. A detail description of the AAO fabrication is presented. After the 1st anodization in oxalic acid (0.3 M) at 45 V, The formed AAO was removed by etching in a solution of 6 wt% $H_3$$PO_4$+1.8 wt% $H_2$$CrO_4$. The regular arrangement of the pores was obtained by the 2nd anodization, which was carried out in the same condition as the 1st anodization. Subsequently, the alumina barrier layer at the bottom of the channel layer was removed in phosphoric acid (1M) after removing of aluminum. Pore diameter, density, and thickness could be controlled by the anodization process parameters such as applied voltage, anodizing time, pore widening time, etc. The pore diameter is proportional to the applied voltage and pore widening time. The pore density and thickness can be controlled by anodization temperature and voltage.
열 화학 기상 증착법을 이용한 삼극관 구조의 탄소 나노 튜브 전계 방출 소자의 제조
유완준,조유석,최규석,김도진,Yu W. J.,Cho Y. S.,Choi G. S.,Kim D. J. 한국재료학회 2004 한국재료학회지 Vol.14 No.8
We report a new fabrication process for high performance triode type CNT field emitters and their superior electrical properties. The CNT-based triode-type field emitter structure was fabricated by the conventional semiconductor processes. The keys of the fabrication process are spin-on-glass coating and trim-and-leveling of the carbon nanotubes grown in trench structures by employing a chemical mechanical polishing process. They lead to strong adhesion and a uniform distance from the carbon nanotube tips to the electrode. The measured emission property of the arrays showed a remarkably uniform and high current density. The gate leakage current could be remarkably reduced by coating of thin $SiO_{2}$ insulating layer over the gate metal. The field enhancement factor(${\beta}$) and emission area(${\alpha}$) were calculated from the F-N plot. This process can be applicable to fabrication of high power CNT vacuum transistors with good electrical performance.
열 화학 기상 증착법을 이용한 탄소 나노 튜브 전계 방출 소자의 제조
유완준,조유석,최규석,김도진,김효진,윤순길,Yu, W.J.,Cho, Y.S.,Choi, G.S.,Kim, D.J.,Kim, H.Y.,Yoon, S.K. 한국재료학회 2003 한국재료학회지 Vol.13 No.5
We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{-1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.