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靜注한 Thiopental의 一時的인 心筋收縮力 抑制作用에 關하여
金根周,崔秉玉,兪春植,金在炯,呂雄淵 최신의학사 1969 最新醫學 Vol.12 No.3
Temporary change in arterial pressuremonophasic decrease or biphasic change, increase followed by decrease, was observed immediately after the intravenous administration of thiopental in dogs and reported recently by this department. Present study is attempted to clarify the mechanism of the changes in arterial pressure immediately after the thiopental administration and to pursue the depression of myocardial contractility by the thiopental. Left ventricular pressure curve and femoral arteriogram were -monitored before and after the intravenous administration of thiopental at the dose and rate of 10 mg/kg/5 sec. in dogs which was lightly anesthetized by the thiopental administration. The results obtained are analyzed and summarized as follows 1. The changes in arterial pressure following intravenous administration of thiopental were well corresponded to the changes of left ventricular systolic pressure and the temporary decrease in arterial pressure after the thiopental injection was seemed due to the depression of myocardial contractility by the thiopental. In biphasic changes of arterial pressure after the thiopental administration, the initial rises in the arterial pressure and in the left ventricular systolic pressure were assumed due to the possible liberation of catecholamine from the myocardium by the thiopental. 2. When the booster dose of the thiopental given to the dog whenever the animal showed tachypnea and/or stretch reflex as a sign of recovery from the anesthesia, exceeded 30 mg/kg(above the three doses) contractility of the myocardium became markedly depressed or deteriorated.
사파이어 웨이퍼 연마공정에서의 표면처리효과에 대한 X-선 회절분석
김근주,고재천 한국결정성장학회 2001 한국결정성장학회지 Vol.11 No.5
수평 Bridgman 방법으로 성장한 사파이어 인고트를 절단 연마한 후, 사파이어 결정기판의 표면을 우레탄 천 위에서 실리카 졸을 사용하여 폴리싱하였다. 표면의 결정성을 X-선 회절을 통하여 조사하였으며, 2중 결정회절에 의한 반치폭은 200~400 arcsec을 가지며, 결정 인고트의 절편화 또는 양면 연삭 연마에 따른 잔류응력에 의한 표면에서의 기계적인 스트레스에 의해 결정성이 손상되어진다. 화학-기계적인 폴리싱공정을 수행한 수에 표면처리로 $1,200^{\circ}C$로 4시간 열처리 및 산처리를 연속적으로 수행할 경우 결정성이 반치폭 8.3 arcsec까지 줄어들어 향상됨을 확인하였다. The chemical-mechanical polishing process was carried out for 2"-dia. sapphire wafer grown by horizontalBridgman method on the urethane lapping pad with the silica sol. The polished wafer shows the full-width at halfmaximum of 200~400 arcsec in double-crystal X-ray diffraction, indicating that the slicing, grinding and lapping processes before the polishing process affected the crystalline structural property of the wafer surface by the mechanical residual stress. For the inclusion of surface treatments after chemical-mechanical polishing such as the thermal annealing at the temperature of $1,200^{\circ}C$for 4 hrs. and chemical etching, the crystalline quality was sigdicantly enhanced with the reduced full-width at half maximum up to 8.3 arcsec.arcsec.
Industrial Applications of THz Imaging Based on Resonant Slit-Type Probe
김근주,김상훈,이정훈,김인수,이용석,김정일 한국전자파학회 2022 Journal of Electromagnetic Engineering and Science Vol.22 No.3
In this study, the possibility of the industrial application of terahertz (THz) imaging technology was verified. It was applied to the inspection of voids in multistack semiconductors that require safe inspection and to the high-resolution detection and inspection of foreign substances in tablets in the pharmaceutical field. To acquire a high-resolution THz image, a resonant slit probe operating in the THz region was designed, and a high-speed scanning system was established. For the inspection of a multistack semiconductor, a lateral scan method was proposed, and voids with a diameter of 0.5 mm in the multistack semiconductor were detected. In addition, the proposed probe even enables the distinguishment of the positions of voids in the multistack semiconductor. For pharmaceutical inspection, we investigated the application of THz imaging to detect mixed foreign objects frequently occurring in the tablet manufacturing process. For metals, plastics, and rubber, which are the most frequently mixed materials in the tablet manufacturing process, the foreign objects were identified in tablets using a transmission THz system. The measured THz image was compared with the conventional X-ray test result to confirm the potential of THz inspection. In the X-ray image, only metal and some polymer foreign objects were detected. In contrast, in the THz image, although the materials could not be distinguished, most foreign substances were detected. Consequently, the THz imaging test was verified as a possible new tool in fields where X-ray or existing tests are not possible.
Electric Field Effect on Nanochannel Formation in Electrochemical Porous Structures of Alumina
김근주,Jaeho Choi,Jung Tack Lee 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.5
The authors investigated the anodization mechanism of aluminum in an oxalic acid solution, and the electrochemical reaction is very unique for pore formation via the dissolution process, which is very dependent on the surface geometry in nanoporous alumina templates. The cross-sectional nanochannels showed that the geometrical curvature of the initial surface can cause the branching of nanochannels to be adjusted in volume occupancy to be direct to the electric field normal to the surface. The nanoporous alumina with the crystalline γ-Al2O3 phase showed hexagonal ordering at a voltage of 40 V, with a nanohole distance of 102 nm from the charge density oscillation of the oxalic acid solution.
김근주 한국전기전자재료학회 2004 Transactions on Electrical and Electronic Material Vol.5 No.5
The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.
김근주 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.2
The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to 569.5 cm-1, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of 567.6 cm-1, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.