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저압 MOCVD 방법으로 성장된 InAlAs 에피층에서 상분리와 규칙 현상의 관찰
조형균,이번,백종협,한원석,이정용,권명석,Cho, Hyung-Koun,Lee, Bun,Baek, Jong-hyeob,Han, Won-Seok,Lee, Jeong-Yong,Kwon, Myoung-Seok 한국진공학회 1999 Applied Science and Convergence Technology Vol.8 No.3(2)
We have studied the phase separation and ordering phenomeon of InAlAs epilayers grown on InP substrate by LP-MOCVD with DCXRD, PL, and TEM. From the intensity and FWHM of DCXRD and PL, we observed that the structural and optical quality of InAlAs epilayers were improved as growth temperature increased. The band-gap reduction due to phase separation and ordering is 291, 246, and 28 meV in the InAlAs epilayers grown at $565^{\circ}C$, $615^{\circ}C$, and $700^{\circ}C$, respectively, and shows the same from the InAlAs epilayer town at 5$65^{\circ}C$ in which the HRTEM micrograph showed the lattice fringe between InAs-rich and AlAs-rich regions was tilted by $2^{\circ}$ due to composition difference. However the maximum degree of ordering by intensity of extra spots was obtained at medium growth temperature. The annealing experiment by RTA of sample grown at $565^{\circ}$ shows a maximum band-gap shift of 78eV at $880^{\circ}$ for 3 min, and TEM shows that the origin of the blue shift of band-gap is the complete disappearance of ordering. Through annealing we can conclude that short time annealing affects only ordering and that most of the total band-gap reduction (~3/4) occurs by phase separation.
저압 MOCVD 방법으로 성장된 lnAlAs 에피층에서 상분리와 규칙 현상의 관찰
조형균(Hyung Koun Cho),이번(Bun Lee),백종협(Jong-Hyeob Baek),한원석(Won Seok Han),이정용(Jeong Yong Lee),권명석(Myoung Seok Kwon) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.3(2)
LP-MOCVD 방법에 의해 InP 기판 위에 성장된 InAlAs 에피층의 상분리와 규칙 현상을 DCXRD, PL, TEM을 이용하여 분석하였다. DCXRD와 PL의 반측폭과 강도로부터 InAlAs 에피층의 구조적, 광학적 품질이 성장 온도가 증가함에 따라 향상되었다. 상분리와 규칙 현상으로 인한 밴드갭의 감소량은 565℃, 615℃, 700℃의 성장 온도에서 각각 291, 246, 28 meV이고 구조적, 광학적 품질과 같은 경향성을 보여주었다. TEM으로부터 상분리 현상은 565℃의 성장 온도에서 가장 강하게 관찰되었고, HRTEM 이미지 사진에서 InAs가 풍부한 영역과 AlAs가 풍부한 영역 사이에 조성 차이로 인하여 약 2˚의 격자 줄무늬의 회전이 발생하였다. 565℃에서 성장된 시편에 대한 RTA 열처리 실험은 880℃에서 3분간의 열처리로 약 78 meV 정도의 밴드갭 증가를 보여주고, TEM을 통해 밴드갭의 증가는 규칙 현상의 완전한 사라짐이라는 것이 관찰되었다. 이 결과는 열처리 전에 발생한 밴드갭 감소량의 3/4가 상분리 현상으로 발생하였다는 결론을 얻을 수 있다. We have studied the phase separation and ordering phenomenon of lnAlAs epilayers grown on InP substrate by LP-MOCVD with DCXRD, PL, and TEM. From the intensity and FWHM of DCXRD and PL, we observed that the structural and optical quality of lnAlAs epilayers were improved as growth temperature increased. The band-gap reduction due to phase separation and ordering is 291, 246, and 28 meV in the InAlAs epilayers grown at 565℃, 615℃, and 700℃, respectively, and shows the same trends as structural and optical quality. The maximum degree of phase separation was obtained by TEM from the lnAlAs epilayer grown at 565℃ in which the HRTEM micrograph showed the lattice fringe between lnAs-rich and AlAs-rich regions was tilted by 2˚ due to composition difference. However, the maximum degree of ordering by intensity of extra spots was obtained at the medium growth temperature. The annealing experiment by RTA of sample grown at 565℃ shows a maximum band-gap shift of 78 meV at 880℃ for 3 min, and TEM shows that the origin of the blue shift of band-gap is the complete disappearance of ordering. Through annealing we can conclude that short time annealing affects only ordering and that most of the total band-gap reduction (~3/4) occurs by phase separation.