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Ta₂O_(5) 게이트 pH-ISFET의 제조 및 그 동작특성
권대혁,김명규,이광만,손병기 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
To improve sensing characteristics of the pH-ISFET using LPCVD-grown Si_(3)N_(4), Ta_(2)O_(5) thin film depositied by RF reactive sputtering was used for hydrogen ion sensing gate and investigated sensing characteristics at various annealing temperatures. The XRD pattern showed that the crystal structure of the Ta20s thin film was amorphous when the annealing temperature was less than 500℃, δ-Ta_(2)O_(5) poly-crystal at MC Ta_(2)O_(5) gate pH-ISFET annealed at 400℃, O_(2) ambient for 1hour, the AES and RBS spectrum showed good stoichiometry (O/Ta=2.5). And its sensing characteristics showed good linearity and high sensitivity(57~59MV/pH) in the wide pH range(pH 2~12), and excellent long-term stability (0.03~0.05 pH/day). It can be concluded from these results that the sensing characteristics of Ta_(2)O_(5) gate pH-ISFET is more excellent than Si_(3)N_(4) gate pH-ISFET.
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광섬유 Fabry-Perot 간섭형 압력센서의 제조 및 동작특성
權大赫 慶一大學校 1999 論文集 Vol.16 No.2
The strain characteristics of a fiber optic Fabry-perot pressure sensor with linearity using a silicon diaphragm is experimentally investigated. A 50 ㎛ thick silicon diaphragm was fabricated by anisotropic etching technology in 44 wt% KOH solution. An interferometric fiber optic pressure sensor has been manufactured by using a fiber optic Fabry-Perot interferometer and a silicon diaphragm. The 2 ㎝ length fiber optic Fabry-Perot interferometers in the continuous length of single mode fiber were produced with two pieces of single mode fiber coated with TiO₂dielectric film utilizing the fusion splicing technique. The one end of the fiber optic Fabry-Perot interferometer was bonded to a silicon diaphragm, and the other end was connected to an optical setup through a 3 dB coupler. For the silicon diaphragm sized 5×5 ㎜², the pressure sensitivity was measured about 0.0066 radian/mmHg and 0.053 radian/mmHg at 15 ㎛ and 50 ㎛thickness diaphragm, respectively.
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p-n접합을 이용한 ISFET의 encapsulation
權大赫 慶一大學校 1992 論文集 Vol.8 No.1
The p-n junction isolation method for the electrical isolation of ISFET chip from the liquid environments has been presented instead of the conventional encapsulant castings carried out by the manual labors which requires much time and experiences. This junction-isolated ISFET showed similar operational characteristics compared with those of the encapsulant-coated ISFET.
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권대혁 경북대학교 센서기술연구소 1996 연차보고서 Vol.1996 No.-
KOH 수용액을 이용하여 실리콘 식각공정기술을 확립하였으며, 이를 이용하여 실리콘 기판 위에 스트레스 균형이 이루어진 600 ㎚ 두께의 Si_3N_4/SiO_2/Si_3N_4 다이아프램을 제조하였다. 이때의 실리콘의 식각률은 약 1.45 ㎛/min정도였다. NON 박막과Au/NiCr/NON 박막에 대한 광투과도, 광흡수도 및 광반사율을 측정한 결과 광흡수는 두 박막에 대해 수%였다. NON 다이아프램 뒷면에 약 100 ㎚의 금을 진공증착하여 제조된 Au/NiCr/NON 박막의 광특성을 조사한 결과, 박막의 광투과도를 수%정도로 감소시킬 수 있어서 센서의 광반사막으로 사용할 수 있었다. NON 다이아프램을 이용하여 제조한 수위측정용 압력센서는 3×3 ㎟, 4×4 ㎟, 5×5 ㎟ 의 정사각형 다이아프램 크기에서 약 3.886 ㎻/㎪, 4.857 ㎻/㎪ 및 5.829 ㎻/㎪의 압력감도를 나타내었으며, 광출력은 인가압력이 증가함에 따라 감소하였다. 광손실을 줄이기 위해 광송수신용 광섬유를 코아 직경이 62.5 ㎛인 멀터모드 광섬유를 사용하였고 다이아프램의 크기를 3×3 ㎟, 4×4 ㎟ 및 5×5 ㎟ 등으로 각각 변화시켜 광강도형 멀터모드 광섬유 압력센서를 제조하고 그 압력특성을 조사하였다. 측정된 광섬유 압력센서의 감도는 각각 약 20.689 ㎻/㎪, 26.694 ㎻/㎪ 및 39.331 ㎻/㎪였다. 광섬유 단면위에 RF 마그네트론 스퍼터링법으로 TiO_2를 증착하였다. TiO_2 박막의 굴절률 및 두께는 각각 약 2.43과 800 Å였다. 광섬유 Fabry-Peort 간섭계를 실리콘 다이아프램과 NON 다이아프램과 결합하여 광간섭형 압력센서를 제조하였다. 5×5 ㎟ 크기의 실리콘 다이아프램의 경우, 그 감도는 두께를 각각 15 ㎛와 50 ㎛로 변화시켰을 때 0.497 radian/㎪ 및 0.392 radian/㎪였다. 또한, 600 ㎚-NON 다이아프램의 경우에는 다이아프램의 크기fmf 2×2 ㎟, 5×5 ㎟ 및 8×8 ㎟로 변화하였을 때 약 0.119radian/㎪, 1.003 radian/㎪ 및 1.571 radian/㎪의 압력감도를 나타내었다. Using KOH solution, silicon etching technology has been established and stress-balanced flat 600 ㎚ thick triple dielectric membrane(150 ㎚-Si_3N_4/300 ㎚ -SiO_2/150 ㎚-Si_3N_4) on silicon substrate has been fabricated. At this time, etching rate of silicon was around 1.45 ㎛/min. At the wavelength of the sensor light source near 1.3 ㎛, optical loss of the NON diaphragm was decreased to a few percents by depositing 100 ㎚-Au layer on it, which is sufficient to be used as a light reflection layer of the sensor. From the optical output power-pressure characteristics of the fabricated intensity-type pressure sensors, the sensitivities of the pressure sensor for measuring water level were about 3.886, 4.857, and 5.829 ㎻/㎪ for the diaphragm sizes of 3×3 ㎟, 4×4 ㎟ and 5×5 ㎟, indicating that the output power linearly decreased with increasing applied pressure. We have used 62.5/126 ㎛ multi-mode fiber for the light transmission to minimize optical loss, and the pressure characteristics were examined for the diaphragm sizes of 3×3 ㎟, 4×4 ㎟, 5×5 ㎟. The respective sensitivities were, about 20.689 ㎻/㎪, 26.694 ㎻/㎪, and 39.331 ㎻/㎪. TiO_2 mirror at the cross section of fiber optic was deposited by using RF magnetron sputter. The refractive index and thickness of the TiO_2 thin film was about 2.43 and 800 Å. An interferometric fiber optic sensor has been manufactured using a fiber optic Fabry-Perot interferferometer and a silicon diaphragm or a NON diaphragm. For the silicon diaphragm sizes of 5×5 ㎟, the sensitivities of the sensor silicon diaphragm thickness of 15 ㎛ and 50 ㎛ were 0.497 radian/㎪ and 0.392 radian/㎪, respectively. And for the silicon diaphragm sizes of 2×2 ㎟, 5×5 ㎟, 8×8 ㎟, the sensitivities were 0.110 radian/㎪, 1.003 radian/㎪, and 1.571 radian/㎪, respectively.
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