http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
ZnO 박막의 전기적 구조적 특성에 미치는 수소 분압비의 영향
이성훈(Sunghun Lee),신민근(Min-Geun Shin),변응선(Eungsun Byon),김도근(Do-Geun Kim),전상조(Sang-Jo Jeon),구본혼(Bon Heun Koo) 한국표면공학회 2006 한국표면공학회지 Vol.39 No.6
Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were 1.4%~9.8% at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity. While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was 2.5 × 10?³ Ωㆍ㎝ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.