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        Measuring electrical resistances of ACF sensors by CO2 adsorption in a small chamber

        Kim Dae Wan,곽이규,김홍근,유승곤 한국탄소학회 2022 Carbon Letters Vol.32 No.1

        The electrical resistances of small-sized activated carbon fiber (ACF) fabric (specific surface area: 1244.7 m2/g, average pore diameter: 1.92 nm) and felt (specific surface area: 1321.2 m2/g, average pore diameter: 2.21 nm) sensors were measured in a temperature and humidity controlled gas chamber by CO2 adsorption at different surrounding CO2 concentrations (3000–10,000 ppm). The electrical resistances of ACF sensors decreased linearly as the increase of temperature and decreased exponentially as the increase of humidity in the ambient atmospheric chamber. The electrical resistances of ACF rapidly decreased within 4 s and an equilibrium state was achieved within 10 s due to the very rapid CO2 adsorption at room temperature and 40% humidity. Comparing the difference in electrical resistance values measured during injection of similar concentrations of CO2 after reaching the equilibrium value, the fabric exhibited a significant change, whereas the felt did not, even though it had a relatively larger specific surface area. The reason is that micropore volume greatly affected the amount of CO2 adsorbed, whereas the specific surface area did not affect it as much. Therefore, ACF fabric with large micropores (> 2.0 nm) can be developed and used as CO2 sensors in small rooms such as a passenger vehicles.

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        Optical characteristics of light-emitting diodes with high transparent conductive film at low temperatures

        이형주,박광훈,소진수,김재훈,김홍근,곽이규 한국물리학회 2021 Current Applied Physics Vol.22 No.-

        In this paper, we report the synthesis and transmittance of a titanium–indium–tin oxide (TITO) film, fabricated through a low-temperature process. The TITO film was fabricated by incorporating a 2-nm-thick titanium barrier at the bottom of an ITO film. The transmittance characteristics of the TITO film were examined for light-emitting diodes (LEDs) of various wavelengths at different post-annealing temperatures. A saturated high transmittance was observed at a temperature of 550 ◦C, which is relatively low when compared to that in the case of a conventional ITO film. Photoluminescence studies demonstrated that a 450-nm-thick TITO film, fabricated at 550 ◦C, was highly effective in improving the performance of the LED, when compared to conventional ITO films. The X-ray diffraction peaks, scanning electron microscopy images, and transmittance electron microscopy images confirmed that titanium atoms could improve the crystallization of ITO. It was found that non-crystallization in ITO was effectively activated by the titanium barrier. Furthermore, the optical bandgap (3.77 eV for the conventional ITO film) was improved to 3.92 eV in the TITO film. An infrared LED fabricated with a TITO film displayed 70% higher light output power than that with a conventional ITO film. These results suggest that using a titanium barrier is essential to effectively improve inactive nucleation sites in ITO films grown at low temperatures.

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