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강봉구(B.K. Kang),박기현(K.H. Park),윤종렬(J.R. Yoon),구양모(Y.M. Koo) 한국자기학회 1992 韓國磁氣學會誌 Vol.2 No.2
Results of magnetic measurement of a prototype Storage Ring dipole magnet for the Pohang Light Source (PLS) are summarized. Hall probe mapping and rotating coil methods are used to measure field profiles and integrated field properties. End chamfering experiments are performed on the as-built magnet, which has four removable pole-end pieces, to meet the specifications set from beam dynamics requirement. The corrected magnet has efficiency of 99.7% at 2.0 GeV excitation ad higher order multipole error levels less than the specifications for all excitations, showing that the magnet has appropriate properties for the PLS Storage Ring.
정욱진,권영규,배영호,김광일,강봉구,손병기 ( W. J . Chung,Y . K . Kwon,Y . H . Bae,K . I . KIm,B . K . Kang,B . K . Sohn ) 한국센서학회 1996 센서학회지 Vol.5 No.1
Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, SiH₂Cl₂/ H₂ gas mixtures and various process parameters including Hz prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of 900℃. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about 200A /decade in the structure of undoped Si / n^+ -Si substrate.
RTCVD 법으로 성장한 Si1-xGex 에피막의 특성
정욱진,군영규,배영호,김광일,강봉구,손병기 ( W . J . Chung,Y . K . Kwon,Y . H . Bae,K . I . Kim,B . K . Kang,B . k. Sohn ) 한국센서학회 1996 센서학회지 Vol.5 No.2
The growth and characterization of heteroepitaxial Si_(l-x)Ge_x films grown by the RTCVD (Rapid Thermal Chemical Vapor Deposition) method were described. For the growth of Si_(l-x)Ge_x heteroepitaxial layers, SiH₄/ GeH₄ / H₂ gas mixtures were used. The growth conditions were varied to investigate their effects on the Si / Ge composition ratios, the interface abruptness and crystalline properties. The experimental data shows that the misfit threading dislocation in Si_(l-x)Ge_x / Si heteroepitaxial film of about 400 A thickness was not observed at the growth temperature of as low as 650℃, and the composition ratios of Si / Ge changed linearly with SiH₄ / GeH₄ gas mixing ratios in our experimental ranges. In the in-situ boron doping experiments, the doping abruptness would be controlled within several hundreds Å/decade.
HF:H₂O₂:CH₃COOH 용액을 이용한 실리콘-져마늄 에피막의 화학적 선택 식각
안창근,정욱진,배영호,김광일,강봉구,권영규,손병기 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The selective chemical etching of Si_(1)-_(x)Ge_(x). heteroepitaxial layer grown by rapid thermal CVD (RTCVD) method has been studied with respect to Ge content ( 0.15 ≤ x ≤ 0.30 ). The properties of HF : H_(2)O_(2) : CH_(3)COOH (1:2:3) chemical etchant is highly selective in the Si_(1)-_(x)Ge_(x) / Si heteroepitaxial structure. The selectivity is presented better than 100 for Ge content (x≥0.20) and increased with Ge content in Si_(1)-_(x)Ge_(x) heteroepitaxial layer.