http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
생물막 공법을 이용한 하수 유출수 내 저농도 유기물 및 질소의 3차 처리
문병무 ( Byung Moo Moon ),이채영 ( Chae Young Leep ) 한국수처리학회 2014 한국수처리학회지 Vol.22 No.6
This research was aimed to investigate the performance of the bio film process with ceramic media for low organic and nitrogen levels in domestic wastewater effluent. It consisted of up flow anoxic (1.1㎥) and down flow oxic (0.9㎥) bio film reactors. Furthermore, we also evaluated the proper C/N ratio due to the lower denitrification efficiency without the addition of an external carbon source. The batch experiment suggested that the proper C/N ratio for enhancing denitrification and minimizing residual organic matter was 3.0 and it was applied to the anoxic biofilm reactor from phases Ⅱ to Ⅶ. The organic and nitrogen compounds in domestic wastewater effluent were very low and the C/N ratio of the influent in the biofilm process was 1.3. It was continuously operated for more than 180 days without pH adjustment and chemical addition except for methanol as an external carbon source. In this experiment, the hydraulic retention time (HRT) decreased from 5.3 to 1.0 hr. 10More than 75 and 83% of biochemical oxygen demand (BOD) and nitrate removal rates were obtained at a HRT of 5.3 hr, respectively. BOD and nitrate removal rates decreased to 53 and 58% as the HRT decreased to 1.0 hr. Although BOD and nitrate removal rates were reduced due to the decrease of the HRT, the effluent concentrations of BOD and nitrate in the biofilm process were less than 4mg/L. The specific denitrification rate increased as the HRT decreased. The maximum rate could be 1.97kg NO3?-N/㎥·d which was higher than values reported in the literature. Therefore the biofilm process could be effective for treating domestic wastewater effluent containing low concentrations of organic and nitrogen compounds.
PLD를 이용한 강유전체(PZT, PST, PT)/YBCO 박막 구조의 제작과 전기적인 특성에 관한 연구
김정환,이재형,문병무,Kim, Jung-Hwan,Lee, Jae-Hyung,Moon, Byung-Moo 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.7
(PZT, PST, PT)/ YBCO structured have been grown on single crystal $LaAlO_3$ using in-situ Nb:YAG pulsed laser deposition technique. The optimum conditions of fabrication for high quality films have been established under various oxygen pressure. TBCO was used as a metallic electrode for polarizing ferroelectric thin fillms. Lattice mismatch of these materials were found to be with in 3%. As a result XRD patterns and rocking curves, (PZT, PST, PT)/ YBCO multiayered thin films on $LaAlO_3$ substrates showed preferred orientation to c-axis. For invastigation on electrical properties of ferroelectric thin films, remanent polaiztion $P_r$ and coercive field $E_c$ were measured for three samples. At each optimum condition, they showed the values of P_r=60 \mu C/cm^2 and E_c=240kV/ cm for PT, 30\mu C/cm^2 and 105kV/cm for PZT, 1.5\mu C/cm^2$ and 15kV/cm for PST. Frequency dependence of dielectric properties of ferroelectric thin fillms was also investigated. As a result, it showed the frequency dependence was relatively small in the range of 10Hz~10kHz.
4H-SiC 기판의 a-, c-, m-면방향에 따른 ZnO 나노선의 Photoluminescence 특성 분석
김익주,여인형,문병무,강민석,구상모,Kim, Ik-Ju,Yer, In-Hyung,Moon, Byung-Moo,Kang, Min-Seok,Koo, Sang-Mo 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.5
ZnO thin films were deposited on a-, c- and m- plane oriented 4H-SiC substrates by pulsed laser deposition. ZnO nanowires were formed on substrates by tube furnace. Shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. Average surface roughness and root mean square surface roughness were measure by atomic force microscope. Optical properties were investigated by Photoluminescence measurement. Density of ZnO nanowires grown on a-, c- and m-plane oriented 4H-SiC substrates were 17.89 ${\mu}m^{-2}$, 9.98 ${\mu}m^{-2}$ and 2.61 ${\mu}m^{-2}$, respectively.
Plasma Etch Damage가 (100) SOI에 미치는 영향의 C-V 특성 분석
조영득,김지홍,조대형,문병무,조원주,정홍배,구상모,Jo, Yeong-Deuk,Kim, Ji-Hong,Cho, Dae-Hyung,Moon, Byung-Moo,Cho, Won-Ju,Chung, Hong-Bay,Koo, Sang-Mo 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8
Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.
Spin-coating을 이용하여 Flexible Film에 제작된 ZnO TCO의 특성 분석
전민철,이규탁,박상욱,이경주,문병무,조원주,고중혁,Jun, Min-Chul,Lee, Ku-Tak,Park, Sang-Uk,Lee, Kyung-Ju,Moon, Byung-Moo,Cho, Won-Ju,Koh, Jung-Hyuk 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.4
This article introduces the characterization of spin coated ZnO transparent conducting oxide on the flexible substrates. As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. So, We will investigate the electrical property and optical transmittance of ZnO transparent conducting oxide through the 4-point probe resistivity meter, and ultraviolet-vis spectrometer Lamda 35, respectively.
Glass Substrate와 PET Film위에 Screen Printing된 ZnO Thick Film의 구조적 전기적 특성
이규탁,전민철,채문순,이경주,문병무,고중혁,Lee, Ku-Tak,Jeon, Min-Cheol,Chae, Moon-Soon,Lee, Kyung-Ju,Moon, Byung-Moo,Koh, Jung-Hyuk 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.5
As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Recently, rapid progress has been made in the field of DSSC (dye sensitized solar cell)area. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. In this paper, we will prepare ZnO thick films on the PET substrates for the electrode applications. We will investigate the structural and microstructure properties through the XRD, and SEM analysis, respectively. Also, we will study the electrical of specimens to apply the conducting electrode.
PLD 기법에 의한 Na<sub>0.5</sub>K<sub>0.5</sub>NbO<sub>3</sub> 박막 제작
최원석(Won-Seok Choe),문병무(Byung-Moo Moon),조중래(Choong-Rae Cho) 한국항해항만학회 2000 한국항해항만학회 학술대회논문집 Vol.3 No.1
Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase Na<sub>0.5</sub>K<sub>0.5</sub>NbO₃ (NKN) thin film have been grown on LaAlO₃ substrates using KrF excimer laser. X-ray diffraction θ-2θ scan, rocking curves, and φ scan data evidence highly c-axis oriented along the [001] direction.