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UV 처리된 유리기판위에 RF-스퍼터된 PTFE 박막들의 발수 특성
손진운,윤현오,배강,손선영,김화민,Son, Jin-Woon,Youn, Hyon-O,Bae, Kang,Sohn, Sun-Young,Kim, Hwa-Min 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.1
Surface properties of polytetrafluoroethylene(PTFE) films fabricated by rf-magnetron sputtering system with UV surface treatment were investigated to increase water contact angle for their hydrophobic property. We found that the surface morphology and water contact angles of PTFE film modified as a function of the UV treatment times using UV-irradiation were influenced. The water contact angle of PTFE film with optimized UV treatment time for 15 minute showed a high hydrophobicity compared with the film without any surface treatment. We thought that it was due to the energy change of PTFE surface with an adhesion improvement to the glass surface as a smoothing a rough surface with needle-shape and/or the enhancement of an interface property as a removing some defects on the surface like a cleaning effect.
FTS 장치를 이용한 가스 차단막용 SiO<sub>x</sub> 및 SiO<sub>x</sub>N<sub>y</sub> 박막의 공정특성
손진운,박용진,손선영,김화민,Son, Jin-Woon,Park, Yong-Jin,Sohn, Sun-Young,Kim, Hwa-Min 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.12
In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.