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Fabrication and structural, electrical characterization of i-ZnO/n-ZnO nanorod homojunctions
S. Yılmaz,E. Bacaksız,İ. Polat,Y. Atasoy 한국물리학회 2012 Current Applied Physics Vol.12 No.5
Well-aligned ZnO nanorods were synthesized by a vapor phase transport method on ZnO buffer layer coated n-Si substrates. X-ray diffraction and scanning electron microscopy results showed that the deposited ZnO nanorods crystallize in the wurtzite structure and are highly textured with their c-axes normal to the substrate and show a clearly hexagonal morphology. A heavily compensated and intrinsic ZnO layer (i-ZnO) doped with both Mg and Na was deposited on the nominally undoped ZnO nanorods (which show a natural n-type behavior) to produce an i-ZnO/n-ZnO homojunction. The i-ZnO layer consisted of the grainy shape nano-crystallites with the wavy surface morphology. The currentevoltage (I-V) characteristics of these structures in the temperature range of 150e300 K have been analyzed in the framework of standard thermionic emission (TE) theory with the assumption of a Gaussian distribution of the barrier heights. The values of zero bias barrier height (Φb0) and ideality factor (n) were found to be strongly temperature dependent whereby n decreases while Φb0 increases with increasing temperature. The ln(I0/T2) vs q/kT plot shows a straight line behavior and the values of activation energy (Ea = Φb0) and the Richardson constant (A*) determined from the intercept and slope of the plot were 0.926 eV and 2.61 × 10-8 A cm-2 K-2, respectively. This value of A* is much lower than the known value of 32 A cm-2 K-2 for ZnO. Thus, a modified ln(0=T2)-(σ20q2=2k2T2)vs. q/kT plot based on a Gaussian distribution of barrier heights was used which yields a mean barrier height (Φb)and modified effective Richardson (A**) of 1.032 eV and 34.85 A cm- K-, respectively. This value of A** is much closer to the theoretical value of 32 A cm-2K-2 for ZnO.
S. Fiat,I. Polat,E. Bacaksiz,M. Kompitsas,G. Çankaya 한국물리학회 2013 Current Applied Physics Vol.13 No.6
p-CuIn0.7Ga0.3(Se(1-x)Tex)2 type thin films were synthesized by thermal evaporation method on Mo coated glass substrates. To obtain Al/CuIn0.7Ga0.3(Se(1-x)Tex)2/Mo Schottky diode structure for two compositions of x = 0.0 and 0.6, Al metal was evaporated on upper surface of CuIn0.7Ga0.3(Se(1-x)Tex)2 as a front contact. Al/p-CuIn0.7Ga0.3(Se(1-x)Tex)2/Mo structures were annealed temperature range from 150 ℃ to 300 ℃ for 10 min under vacuum. The electrical and dielectrical properties of Al/p-CuIn0.7Ga0.3(Se(1-x)Tex)2 (CIGSeTe)Schottky barrier diodes (SBD) have been investigated. CapacitanceeVoltage (CeV) characteristics,ConductanceeVoltage (G/weV) characteristics and interface state density were studied in order to obtain electrical and dielectrical parameters. The effects of interface state density (Nss), series resistance (Rs), the dielectric constant ( 30), dielectric loss ( 300), dielectric loss tangent (tan d), ac electrical conductivity (sac) and carrier doping densities were calculated from the CeV and G/weV measurements and plotted as a function of annealing temperature. It was observed that the values of carrier doping density NA for annealing temperature at 150 ℃ decreased from 2.83 x 10+15 cm-3 to 2.87 x 10+14 cm-3 with increasing Te content from x = 0.0 to 0.6. The series resistance for x = 0.0 found to be between 10 and 75 U and between 50 and 230 U for x = 0.6 in the range of annealing temperature at 150-300 ℃.
Ferdi. Akman,H. Ogul,I. Ozkan,M.R. Kaçal,O. Agar,H. Polat,K. Dilsiz 한국원자력학회 2022 Nuclear Engineering and Technology Vol.54 No.1
Advanced radiation applications have been widely used and extended to many fields. As a result of thisfact, choosing an appropriate shielding material based on the radiation application has become vital. Inthis regard, the integration of elements into polymer composites has been investigated and contributedto the quantity and quality of radiation shielding materials. This study reports photon attenuation parametersand electromagnetic shielding effectiveness of a novel polymer composite prepared with amatrix reinforced with three different proportions (5, 10, and 15 wt%) of niobium content. Addition of Nbdopant improves both photon attenuation and electromagnetic shielding effectiveness for the investigatedcomposites. Therefore, Nb(15%) polymer composite with highest concentration has been found tobe the best absorber for ionizing and non-ionizing radiations. Consequently, the performed analyzesprovide evidences that the prepared Nb-reinforced polymer composite could be effectively used asphoton radiation attenuator and electromagnetic shielding material