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산업용 S / W 구제표준 적합성 인증시스템의 설계 및 구현
최민용(Minyong Choi),양해술(Haesool Yang) 한국정보과학회 2003 한국정보과학회 학술발표논문집 Vol.30 No.1B
최근 소프트웨어 품질에 대한 관심이 높아짐에 따라 그에 따른 기반 기술들이 요구되고 있다. 산업분야에 있어서도 작업을 수행하는 기계장치의 성능향상을 위해서 소프트웨어가 차지하는 중요성이 점점 증가함에 따라 해당 장치에 대한 성능은 물론 품질에 있어서도 소프트웨어의 중요도가 크게 향상됐다. 이러한 시대적 흐름에 따라 산업분야에 있어서 내장형 소프트웨어의 일종인 산업용 소프트웨어에 대한 품질인증 · 평가체계를 구축하고 이를 활용하여 산업용 소프트웨어 국제표준 적합성 인증 시스템을 설계 구현하고자 한다.
Xueqi Guo,Yuheng Zeng,Zhi Zhang,Yuqing Huang,Mingdun Liao,Qing Yang,Zhixue Wang,Minyong Du,Denggao Guan,Baojie Yan,Jichun Ye 한국물리학회 2019 Current Applied Physics Vol.19 No.7
The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ∼0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (Vbi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiOx, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiOx layer. The C of depleting layer deviates from the normal linear curve in the 1/C2-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the Vbi can still be estimated. We find that the Vbi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.
Jeon, Gyeong G.,Lee, Myeongjae,Nam, Jinwoo,Park, Wongi,Yang, Minyong,Choi, Jong-Ho,Yoon, Dong Ki,Lee, Eunji,Kim, BongSoo,Kim, Jong H. American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.35
<P>Electron donor (D)-acceptor (A)-type conjugated polymers (CPs) have emerged as promising semiconductor candidates for organic field-effect transistors. Despite their high charge carrier mobilities, optimization of electrical properties of D-A-type CPs generally suffers from complicated post-deposition treatments such as high-temperature thermal annealing or solvent-vapor annealing. In this work, we report a high-mobility diketopyrrolopyrrole-based D-A-type CP nanowires, self-assembled by a simple but very effective solvent engineering method that requires no additional processes after film deposition. In situ grown uniform nanowires at room temperature were shown to possess distinct edge-on chain orientation that is beneficial for lateral charge transport between source and drain electrodes in FETs. FETs based on the polymer nanowire networks exhibit impressive hole mobility of up to 4.0 cm<SUP>2</SUP> V<SUP>-1</SUP> s<SUP>-1</SUP>. Moreover, nanowire FETs showed excellent operational stability in high temperature up to 200 °C because of the strong interchain interaction and alignment.</P> [FIG OMISSION]</BR>