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The Interaction of Oxytocin and Social Support, Loneliness, and Cortisol Level in Major Depression
Tsung-Yu Tsai,Huai-Hsuan Tseng,Mei Hung Chi,Hui Hua Chang,Cheng-Kuan Wu,Yen Kuang Yang,Po See Chen 대한정신약물학회 2019 CLINICAL PSYCHOPHARMACOLOGY AND NEUROSCIENCE Vol.17 No.4
Objective: Loneliness is a specific risk factor for depressive symptoms and suicidal behavior. The present study examined whether the serum oxytocin level would interact with social support and buffers loneliness and hypothalamic-pituitary- adrenal (HPA)-axis activity in drug-naïve patients with major depressive disorder (MDD). Methods: Twenty-six patients with MDD (male:female = 3:23; mean age, 45.54 ± 12.97 years) were recruited. The 17-item Hamilton Depression Rating Scale, UCLA Loneliness Scale and self-reported Measurement of Support Function Questionnaire were administered. Serum oxytocin and cortisol levels were assessed using a commercial immunoassay kits. Results: In MDD patients, a negative association was found between degrees of social support and loneliness ( = −0.39, p = 0.04). The interaction between social support and serum oxytocin level was negatively associated with loneliness ( = −0.50, p = 0.017) and serum cortisol level ( = −0.55, p = 0.020) after adjusting for age. Follow-up analyses showed that the association between higher social support and lower loneliness was observed only in the higher-oxytocin group (r = −0.75, p = 0.003) but not in the lower group (r = −0.19, p = 0.53). The significance remained after further adjusting for sex and depression severity. Conclusion: Low oxytocin level is a vulnerability factor for the buffering effect of social support for loneliness and aberrant HPA-axis activity in MDD patients.
Electrical Measurements of an AlGaN/GaN High-electron-mobility Transistor Structure Grown on Si
Zhi-Yao Zhang,Shun-Tsung Lo,Li-Hung Lin,Kuang Yao Chen,J. Z. Huang,Zhi-Hao Sun,C.-T. Liang,N. C. Chen,Chin-An Chang,P. H. Chang 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.9
We report on magnetotransport results for an Al<sub>0.15</sub>Ga<sub>0.85</sub>N/GaN high-electron-mobility-transistor structure grown on a p-type Si (111) substrate. Our results show that there exists an approximately temperature (<i>T</i>)-independent point, which could be ascribed to a direct transition from a weak insulator to a high Landau level filling factor quantum Hall state, exists in the longitudinal resistivity ρ<sub>xx</sub>. The Hall resistivity decreases with increasing <i>T</i>, compelling experimental evidence for electron-electron interaction effects in a weakly-disordered two-dimensional (2D) system. We find that electron-electron interaction effects can be estimated and eliminated, giving rise to a corrected nominally temperature-independent Hall slope. By fitting the low-field magnetotransport data to conventional 2D weak localization theory, we find that the dephasing rate 1/τ<sub>φ</sub> is proportional to <i>T</i>. Moreover, 1/τ<sub>φ</sub> is finite as <i>T</i> → 0, evidence for zero-temperature dephasing in our system.
Liang, Chi-Te,Lin, Li-Hung,Kuang Yoa, Chen,Lo, Shun-Tsung,Wang, Yi-Ting,Lou, Dong-Sheng,Kim, Gil-Ho,Yuan-Huei, Chang,Ochiai, Yuichi,Aoki, Nobuyuki,Chen, Jeng-Chung,Lin, Yiping,Chun-Feng, Huang,Lin, Sh Springer 2011 Nanoscale research letters Vol.6 No.1
<P>A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.</P>