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金泰鏞,崔震宇,盧基喆,裵鍾淳 慶尙大學校生産技術硏究所 1999 生産技術硏究所論文集 Vol.15 No.-
Most of pile foundations which are carried out in the construction sites are used to transfer vertical load such as self weight to lower ground. But the piles which are used at abutment, open type wharf and slope are loaded not only vertical load but also lateral load such as earth pressure or wind pressure. Usually pile foundations are carried out in the form of group pile foundations. So in this paper, authors are going to deal with the behavior of laterally loaded group piles. With model piles, authors did some experiments by changing the relative density and the pile-space of pile-embedded-ground. According to the result of the experiments, authors have got characteristics of loadshare at each row in group piles. The results are as follows : 1. The Lateral load capacity for the initial horizontal displacement increases linearly and as the displacement is increasing, the behavior becomes parabolic. 2. The front row of piles is the highest in lateral load capacity, and the middle row of piles follow the front row. The tail row of piles is increasing, the loadshare-ratio of each row is accessing to the average loadshare-ratio. 3. As the space between piles is increasing, the loadshare-ratio of each row is accessing to the average loadshare-ratio. 4. In proportion to the increase of relative density, the lateral load of each row increases but the loadshare-ratio is not changed, despite the change of the relative density.
Choi, Chel-Jong,Kang, Seung-Min,Hong, Hyo-Bong,Lee, Soo-Hyung,Kim, Jin-Gyu,Ahn, Kwang-Soon,Yoon, Jong-Won The Japan Institute of Metals 2010 MATERIALS TRANSACTIONS Vol.51 No.4
<P>We fabricated metal-oxide-semiconductor (MOS) devices with a high-k Er-silicate gate dielectric, and demonstrated their electrical performance. The increase in the rapid thermal annealing (RTA) temperature leads to a reduction of the equivalent oxide thickness (EOT), which is attributed in par to the thickness evolution of Er-silicate film and to the chemical bonding change from an Si-rich to an Er-rich silicate. The <I>in-situ</I> investigation of the interfacial reaction between the Er and SiO<SUB>2</SUB> film using a high-voltage electron microscopy (HVEM) revealed a linear relationship between the squared thickness of Er-silicate layer and <I>in-situ</I> annealing time, indicating that the Er-silicate growth is a diffusion-controlled process. The parabolic growth constants of the Er-silicate film were calculated to be 2.3×10<SUP>−16</SUP> and 9.3×10<SUP>−16</SUP> cm<SUP>2</SUP>/s for <I>in-situ</I> annealing temperatures of 350 and 450°C, respectively.</P>
Choi, Chel Jong,Janardhan, V. Trans Tech Publications, Ltd. 2014 Applied Mechanics and Materials Vol.575 No.-
<P>We have fabricated p-type monocrystalline silicon (Si) solar cell with phosphorus (P) screen-printed n+ emitter and investigated its electrical and structural properties. During P screen-printed n+ emitter process, a 16 nm-thick phosphosilicate glass (PSG) layer was formed as a result of interaction between P-dopant paste and Si substrate. Due to the PSG reflow associated with the reduction of viscosity of oxide caused by the amount of P atoms in PSG layer, thinner and thicker PSG film was formed in convex and concave regions of the textured Si surface, respectively, which was quite different from the growth behavior of thermally grown SiO2 layer. Due to a strong dependence of P diffusion on the Si interstitials, deeper and shallower junctions were abnormally formed near the convex and concave regions in the textured Si surface, respectively. The electric field and temperature dependence of the current-voltage characteristics demonstrated that the Poole-Frenkel barrier lowering mechanism along with the generation-recombination mechanism had dominance over the current conduction in the reverse bias region of p-type monocrystalline Si solar cell fabricated using screen printing process.</P>
Meta-analysis of the effects of beta blocker on survival time in cancer patients
( Chel Hun Choi ),( Tae Jong Song ),( Tae Hyun Kim ),( Jun Kuk Choi ),( Jin Young Park ),( Aera Yoon ),( Yoo Young Lee ),( Tae Joong Kim ),( Duk Soo Bae ),( Jeong Won Lee ),( Byoung Gie Kim ) 대한산부인과학회 2012 대한산부인과학회 학술대회 Vol.99 No.-
Knowledge of the role of beta blockers on cancer survival may be helpful for cancer patients.This study was to elucidate the potential benefit of beta blockers on cancer survival. We comprehensively searched PubMed, Embase, and the Cochrane Library from their inception to April 2013. Two authors independently screened and reviewed the eligibility of each study and coded the participants, treatment, and outcome characteristics. The primary outcomes were overall survival (OS) and disease-free survival (DFS). Twelve studies published between 1993 and 2013 were included in the final analysis. Four papers reported results from 10 independent groups, resulting in a total of 18 comparisons based on data obtained from 20,898 subjects. Effect sizes (hazard ratios) were heterogeneous and random effects models were used in the analyses. The meta-analysis demonstrated that beta blocker use can improve OS (HR=0.79; 95% CI 0.67 - 0.93; p=0.004) and DFS (HR=0.69; 95% CI 0.53 - 0.91; p=0.009). Although statistically not significant, the effect size was greater in patients with low stage cancer or cancer treated primarily with surgery than in patients with high stage cancer or cancer treated primarily without surgery (HR: 0.60 vs. 0.78, and 0.60 vs. 0.80, respectively). Although only two study codes were analyzed, the studies using nonselective beta blockers showed that there was no overall effect on OS (HR = 0.52, 95% CI: 0.09 - 3.04). This meta-analysis provides evidence that beta blocker use can prolong the survival of cancer patients, especially patients with early stage cancer treated primarily with surgery.
Analysis of Transconductance <tex> $(g_{m})$</tex> in Schottky-Barrier MOSFETs
Sung-Jin Choi,Chel-Jong Choi,Jee-Yeon Kim,Moongyu Jang,Yang-Kyu Choi IEEE 2011 IEEE transactions on electron devices Vol.58 No.2
<P>This paper experimentally investigates the unique behavior of transconductance (<I>gm</I>) in the Schottky-barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) with various silicide materials. When the Schottky-barrier height (SBH) or a scaling parameter is not properly optimized, a peculiar shape of <I>gm</I> is observed. Thus, <I>gm</I> can be used as a novel metric that exhibits the transition of the carrier injection mechanisms from a thermionic emission (TE) to thermally assisted tunneling (TU) in the SB-MOSFETs. When the local maximum point of <I>gm</I> is observed, it can be expected that an incomplete transition occurs between TE and TU in SB-MOSFETs. When a dopant-segregation (DS) technique is implemented in the SB-MOSFETs, however, the carrier injection efficiency from the source to the channel is significantly improved, although the SBH is not minimized. As a consequence, the peculiar shape of the <I>gm</I> disappears, i.e., a complete transition from TE to TU can be enabled by the DS technique.</P>