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Resistive Switching in Epitaxial SrFeOx for Device Application
Vu Binh Nam Hankuk University of Foreign Studies. Graduate Sch 2015 국내석사
Resistive Switching in Epitaxial SrFeOx for Device Application The crystal structure of strontium ferrite SrFeOx has been known to undergoes reversible topotactic phase transformation between insulating brownmillerite (SrFeO2.5) and conducting perovskite (SrFeO3? δ ) phases. In this work, we study whether the SrFeOx film could undergo a reversible transition from an insulating to a conducting state by an external electrical bias voltage. We fabricated the Au/SrFeO2.5/SrRuO3/SrTiO3 (001) devices to study the resistance switching phenomena. The current-voltage measurements of the SrFeOx thin film showed that it could have a reversible insulator to conductor transition triggered by electrical bias voltage. The electroforming voltage required to change the device from the pristine state to the low resistance state (LRS) was significantly lower than the SET voltage.