In recently years, two-dimensional semiconducting transition metal dichalcogenides have attracted much attention because of its unique structure as well as chemical and physical properties. Particularly, single-layer molybdenum disulfide (MoS2) exhibi...
In recently years, two-dimensional semiconducting transition metal dichalcogenides have attracted much attention because of its unique structure as well as chemical and physical properties. Particularly, single-layer molybdenum disulfide (MoS2) exhibits outstanding optical properties. Many researchers utilize various seeding promoters to achieve the MoS2 thin layer. Composite organic compounds has low thermal stability. Here, we report MoS2 monolayer growth using inorganic seeding promoter containing alkali metal ions and the role of inorganic seeding promoter enhancing the nucleation of molybdenum disulfide by chemical vapor deposition. In this growth process, molybdenum oxide as precursor react with seeding promoter including alkali metal on the substrate, this reaction produces alkali metal molybdate, and then formed compounds play the nucleation sites in MoS2 growth. The presence of them increase partial pressure of molybdenum on substrate and is sulfurized to MoS2. In the study, we investigated the role of alkali metal ion is confirmed. A variety of measurement techniques were characterized high crystalline quality, uniformity and layer numbers of the fabricated MoS2 thin layer. Consequently, we suggest the growth mechanism of MoS2 by using the alkali metal ions as inorganic seeding promoter and expect this method paves the new routes for the advanced fundamental study and development of practical device applications with monolayer MoS2