In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti. Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 550℃ for 5 min. 850℃ for 2 min respectively. The contact resistances were measure...
In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti. Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 550℃ for 5 min. 850℃ for 2 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific 10^(4)Ω㎠. and the physical properties of the contact resistivities in the 9.2×10^(4), 7.1×10^(4) and 4.5×s were examined using microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature. there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt. Co had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.