Optimization of the Fabrication Process of InSb Schottky Diodes

다국어 초록 (Multilingual Abstract)

Compound semiconductors with small band gap, such as InSb or InAs, can be candidate materials for an ultra-high-resolution radiation detector. An InSb Schottky diode was developed and the dependency of detector performance on the size of the contact electrode, the chemical etching method, the operating temperature and the passivation method was studied. By comparing the I-V curves of InSb diodes made with various processes, we were able to optimize the fabrication process of the InSb diode. The leakage current of the InSb diode could be reduced significantly due to a blocking metal-semiconductor contact and surface passivation and the diode could be applied to high-resolution radiation measurements.

참고문헌 (Reference)

1 E. Fiorini, 520 : 1-, 2004

2 W. C. McHarris, 242 : 373-, 1986

3 Y. Cui, 51 : 1172-, 2004

4 A. A. Rouse, 49 : 2005-, 2002

5 I. Kanno, 73 : 2533-, 2002

6 I. Kanno, 568 : 416-, 2006

7 R. Tykva, 380 : 198-, 1996

8 H. Chen, 80 : 3509-, 1996

9 N. Rando, 522 : 62-, 2004

10 O. W. Drury, 559 : 728-, 2006

11 F. Gatti, 78 (78): 99-, 1999

12 M. Frank, 19 : 155-, 1999

13 A. Owens, 531 : 18-, 2004

14 M. A. George, 77 : 3134-, 1995

15 G. Wright, 49 : 2521-, 2002

16 S. Ryu, "Signal-to-Noise Ratio Measurement for Silicon Strip Sensors with a Proton Beam" 한국물리학회 50 (50): 1477-1481, 2007

17 Ju Hahn Lee, "Monte Carlo Study on the Imaging Resolution and Sensitivity of a Compton Camera" 한국물리학회 49 (49): 97-102, 2006

18 Hyoung Gin Nam, "Fabrication of a Silicon PIN Diode for Radiation Detection" 한국물리학회 48 (48): 1514-1519, 2006