<P>We propose a systematic fabrication method for stable high-performance organic thin-film transistors (TFTs) that are potentially compatible with high-density integrated circuits. Ag/PEDOT:PSS bilayers provide source/drain (S/D) electrodes wit...
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https://www.riss.kr/link?id=A107754371
2011
-
SCOPUS,SCIE
학술저널
1137-1139(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We propose a systematic fabrication method for stable high-performance organic thin-film transistors (TFTs) that are potentially compatible with high-density integrated circuits. Ag/PEDOT:PSS bilayers provide source/drain (S/D) electrodes wit...
<P>We propose a systematic fabrication method for stable high-performance organic thin-film transistors (TFTs) that are potentially compatible with high-density integrated circuits. Ag/PEDOT:PSS bilayers provide source/drain (S/D) electrodes with low sheet resistance and efficient hole injection capabilities, leading to high-performance bottom-contact pentacene TFTs with a saturation mobility of 0.19 cm<SUP>2</SUP>/ V·s. Patterned dielectric layers based on a fluoropolymer Cytop function as a hydrophobic bank structure to define S/D electrodes in a self-aligned manner from Ag ink and a PEDOT:PSS solution while simultaneously improving the electrical stability of pentacene TFTs.</P>
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