1 J. Brault,, "Staggered Vertical Self-Organization of StackedInAs/InAlAs Quantum Wires on InP (001)" 162-163 (162-163): 584-589, Aug.2000
2 R.H. Wang,, "Room-Temperature Operation of InAsQuantum-Dash Lasers on InP (001)" 13 (13): 767-769, Aug.2001
3 R. Schwertberger,, "Long-Wavelength InP-Based Quantum-Dash Lasers" 14 (14): 735-737, June2002
4 H. Chen,, "InAsQuantum-Dot Lasers Operating near 1.3 ┢m with HighCharacteristic Temperature for Continuous-Wave Operation" 36 (36): 1703-1704, Sept.2000
5 C. Ní., "InAs Self-Assembled Quantum-dot Lasers Grown on(100) InP" 80 (80): 3629-3631, May2002
6 S. Fafard,, "InAs Self-Assembled Quantum Dots on InP byMolecular Beam Epitaxy" 68 (68): 991-993, Feb.1996
7 Y. Qiu,, "High-Performance InAs Quantum-Dot Lasers near 1.3 ┢m" 79 (79): 3570-3572, Nov.2001
8 B. Larmbart,, "High Photoluminescence Efficiency of InAs/InP Self-Assembled Quantum Dots Emitting at 1.5-1.6 ┢m" 13 (13): 143-145, Jan.1998
9 C. Paranthoen,, "Growth and Optical Characterizationsof InAs Quantum Dots on InP Substrate: towards a 1.55 ┢mQuantum Dot Laser" 251 (251): 230-235, Apr.2003
10 H. Saito,, "Ground-State Lasing at RoomTemperature in Long-Wavelength InAs Quantum-Dot Lasers onInP (311)B Substrates" 78 (78): 267-269, Jan.2001
1 J. Brault,, "Staggered Vertical Self-Organization of StackedInAs/InAlAs Quantum Wires on InP (001)" 162-163 (162-163): 584-589, Aug.2000
2 R.H. Wang,, "Room-Temperature Operation of InAsQuantum-Dash Lasers on InP (001)" 13 (13): 767-769, Aug.2001
3 R. Schwertberger,, "Long-Wavelength InP-Based Quantum-Dash Lasers" 14 (14): 735-737, June2002
4 H. Chen,, "InAsQuantum-Dot Lasers Operating near 1.3 ┢m with HighCharacteristic Temperature for Continuous-Wave Operation" 36 (36): 1703-1704, Sept.2000
5 C. Ní., "InAs Self-Assembled Quantum-dot Lasers Grown on(100) InP" 80 (80): 3629-3631, May2002
6 S. Fafard,, "InAs Self-Assembled Quantum Dots on InP byMolecular Beam Epitaxy" 68 (68): 991-993, Feb.1996
7 Y. Qiu,, "High-Performance InAs Quantum-Dot Lasers near 1.3 ┢m" 79 (79): 3570-3572, Nov.2001
8 B. Larmbart,, "High Photoluminescence Efficiency of InAs/InP Self-Assembled Quantum Dots Emitting at 1.5-1.6 ┢m" 13 (13): 143-145, Jan.1998
9 C. Paranthoen,, "Growth and Optical Characterizationsof InAs Quantum Dots on InP Substrate: towards a 1.55 ┢mQuantum Dot Laser" 251 (251): 230-235, Apr.2003
10 H. Saito,, "Ground-State Lasing at RoomTemperature in Long-Wavelength InAs Quantum-Dot Lasers onInP (311)B Substrates" 78 (78): 267-269, Jan.2001
11 M. Asada,, "Gain and the Thresholdof Three-Dimensional Quantum-Box Lasers" QE-22 (QE-22): 2004
12 J.S. Kim,, "Formation of Self-Assembled InAs Quantum Dotson InAl(Ga)As/InP and Effects of a Thin GaAs Layer" 259 (259): 252-256, Dec.2003
13 R. Schwertberger,, "Epitaxial Growth of 1.55 ┢m Emitting InAs Quantum Dashes onInP-Based Heterostructures by GS-MBE for Long-WavelengthLaser Applications" 251 (251): 248-252, Apr.2003
14 J.S. Kim,, "Energy LevelControl for Self-Assembled InAs Quantum Dots Utilizing a ThinAlAs Layer" 78 (78): 3247-3249, May2001
15 H. Folliot,, "Effects ofInterface-Layers Composition and Strain Distribution on theOptical Transitions of InAs Quantum Dots on InP" 58 (58): 10700-10704, Oct.1998
16 F. Klopf,, "Correlationbetween the Gain Profile and the Temperature-Induced Shift inWavelength of Quantum-Dot Lasers" 81 (81): 217-219, July2002
17 T. Akiyama,, "Application of Spectral-HoleBurning in the Inhomogeneously Broadened Gain of Self-Assembled Quantum Dots to a Multiwavelength-ChannelNonlinear Optical Device" 12 (12): 1301-1303, Oct.2000