Preparation and Properties of Sb2O3-doped SnO2 Thin Films Deposited by Using PLD

다국어 초록 (Multilingual Abstract)

Transparent conducting oxides (TCOs) are key materials in optoelectronic devices applications, such as flat-panel displays, touch panel, heat mirrors, gas sensor, light-emitting diodes and solar cell. In this study, the Sb2O3-doped SnO2 films have been deposited on glass substrates by using the pulsed laser deposition (PLD) method. The structural, electrical, and optical properties of these films have been studied as functions of the dopingconcentration, oxygen partial pressure, film thickness, and substrate temperature during deposition. The structural properties of films were analyzed by using X-ray diffraction (XRD). The electrical and the optical properties were checked by using a four probe sheetresistance, Hall measurement system and an UV-VIS-NI spectrometer, respectively. Under optimized deposition conditions (6 wt% Sb2O3, Ts = 500 °C, and 60 m Torr of O2 and film thickness at 700 nm). The optimized films had an electrical resistivity of 1.3 × 10−3 Ω·cm, a carrier concentration of 2.3 × 1020 cm−3, a Hall mobility of 20.1 cm2v−1s−1 and an average optical transmittance of over 80% in the visible range.

참고문헌 (Reference)

1 Z. T. Al-Dhhan, 145 : 145-, 1998

2 G. Haacke, 47 : 4086-, 1976

3 H. Gruber, 153 : 307-, 1989

4 A. Czapla, 182 : 15-, 1989

5 J. Dutta, 239 : 150-, 1994

6 R. Lalauze, 3 : 175-, 1991

7 K. D. Schierbaum, 7 : 709-, 1992

8 W. Gopel, 28 : 1691-, 1990

9 R. N. Ghosthagore, 125 : 110-, 1978

10 Y. Lifshiz, 6 : 687-, 1997

11 M. I. B. Bernardi, 405 : 228-, 2002

12 B. Thangaraju, 402 : 71-, 2002

13 E. Elangovan, 130 : 523-, 2004

14 H. -L. Ma, 191 : 313-, 2002

15 G. Gasparro, 54 : 287-, 1998

16 J. Lee, 516 : 1386-, 2008

17 J. Ma, 214 : 208-, 2003

18 R. Bellingham, 11 : 263-, 1992