<P>On page 5433, Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injecti...
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https://www.riss.kr/link?id=A107547822
Baeg, Kang‐ ; Jun ; Khim, Dongyoon ; Jung, Soon‐ ; Won ; Kang, Minji ; You, In‐ ; Kyu ; Kim, Dong‐ ; Yu ; Facchetti, Antonio ; Noh, Yong‐ ; Young
2012
-
SCI,SCIE,SCOPUS
학술저널
5402-5402(1쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>On page 5433, Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injecti...
<P>On page 5433, Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injection and transport for n‐channel dominant N2200 OFETs. The significant enhancement of hole mobility in N2200 OTFTs is attributed to the strong dipoles in fluorinated high‐k gate dielectric blend of P(VDF‐TrFE):PMMA. </P>
Scalable Fabrication of Silicon Nanotubes and their Application to Energy Storage