SiO₂ as a dielectric of gate structure for CMOS has been facing the scaling limitation due to direct tunneling current and reliability problems. ZrO₂ has been suggested as an alternative gate dielectric material for ULSI CMOS devices due to its th...
SiO₂ as a dielectric of gate structure for CMOS has been facing the scaling limitation due to direct tunneling current and reliability problems. ZrO₂ has been suggested as an alternative gate dielectric material for ULSI CMOS devices due to its thermal stability and high dielectric constant. Since atomic layer deposition (ALD) has several features such as excellent uniformity, accuracy and easiness of thickness control and conformal film formation, ALD is one of the most suitable method for deposition of the gate dielectrics. In this study, ZrO₂ thin films on Si substrate were grown by ALD using a metal-organic precursor, zirconium t-butoxide. We investigated the effects of oxidizer on the characteristics of the ZrO₂ films.