SiO2-like thin films were deposited at low temperature (<50 ℃) by using atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) with a pin-to-plate type dielectric barrier discharge (DBD) and a gas mixture containing hexamethyld...
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다국어 초록 (Multilingual Abstract)
SiO2-like thin films were deposited at low temperature (<50 ℃) by using atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) with a pin-to-plate type dielectric barrier discharge (DBD) and a gas mixture containing hexamethyld...
SiO2-like thin films were deposited at low temperature (<50 ℃) by using atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) with a pin-to-plate type dielectric barrier discharge (DBD) and a gas mixture containing hexamethyldisilazane (HMDS)/Ar/O2. The film's characteristics were investigated as a function of the HMDS flow rate. Increasing the HMDS flow rate from 100 sccm to 500 sccm increased the deposition rate almost linearly from 46.4 nm/min to 141.1 nm/min. However, increasing the HMDS flow rate increased impurities such as C and H
and the surface roughness of the deposited lm. Fourier transform infrared measurement showed an increase of -OH and -(CH3)x (x = 1, 2 or 3) in the film with increasing HMDS flow rate. The increased surface roughness and impurities in the deposited lm are believed to be related to incompletely dissociated HMDS at higher HMDS flow rates. By optimizing the oxygen flow
rate and the HMDS flow rate, we believe that a SiO2 thin film with low impurity and low surface roughnesses can be obtained. In this experiment, with the HMDS flow rate in the range of 100 ∽ 200 sccm, SiO2-like thin films having low surface roughness and low impurities (<3.7 % C) could be obtained.
참고문헌 (Reference)
1 A. N. Krasnov, 80 : 3853-, 2002
2 J. H. Lee, 48 : 91-, 2006
3 Y. Sawada, 28 : 1661-, 1995
4 K. L. Choy, 48 : 57-, 2003
5 H. Stegmannm, 24 : 83-, 2003
6 L. A. O'Hara, 36 : 1427-, 2004
7 D. Trunec, 37 : 2112-, 2004
8 A. Schuze, 26 : 1685-, 1998
9 F. Massines, 200 : 1855-, 2005
10 Y. H. Lee, 44 : L78-, 2005
1 A. N. Krasnov, 80 : 3853-, 2002
2 J. H. Lee, 48 : 91-, 2006
3 Y. Sawada, 28 : 1661-, 1995
4 K. L. Choy, 48 : 57-, 2003
5 H. Stegmannm, 24 : 83-, 2003
6 L. A. O'Hara, 36 : 1427-, 2004
7 D. Trunec, 37 : 2112-, 2004
8 A. Schuze, 26 : 1685-, 1998
9 F. Massines, 200 : 1855-, 2005
10 Y. H. Lee, 44 : L78-, 2005
11 D. Freeman, 7 : 1446-, 1989
12 G. R. Nowling, 14 : 477-, 2005
13 N. Mutsukura, 349 : 115-, 1999
14 A. Ungureanu, 254 : 188-, 2000
15 Q. Chen, 24 : 2006
16 A. B. A. Heel, 13 : 48-, 2007
17 Y. Sawada, 28 : 1661-, 1995
18 K. Schmidt-Szalowski, 5 : 173-, 2000
19 S. E. Alexandrov, 11 : 481-, 2005
20 R. Zandi-Zand, 53 : 286-, 2005
21 E. Vassallo, 200 : 3035-, 2006
22 T. Gunji, 15 : 683-, 2001
23 J. Viard, 17 : 2025-, 1997
24 J. F. Moulder, "Handbook of X-ray Photoelectron Spectroscopy" Pekin-Elmer Co. 46-, 1992
25 H. O. Pierson, "Handbook of Chemical Vapor Deposirion Principles, Technology and Applicarions" William Andrew Publishing 1999
26 Thuy T.T. Pham, "Effect of Ion Bombardment on the Chemical and the Mechanical Properties of Silicon-Nitride Thin Films Deposited by Using PECVD with SiH4/NH3/Ar Gases at Low Temperature" 한국물리학회 51 (51): 1934-1939, 2007
Unipolar Resistive Switching of EuxOy Polycrystalline Films
Electrical Characteristics of In-Situ-Doped Polycrystalline 3C-SiC Thin Films Deposited by Using CVD
학술지 이력
연월일 | 이력구분 | 이력상세 | 등재구분 |
---|---|---|---|
2023 | 평가예정 | 해외DB학술지평가 신청대상 (해외등재 학술지 평가) | |
2020-01-01 | 평가 | 등재학술지 유지 (해외등재 학술지 평가) | |
2011-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2009-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2007-01-01 | 평가 | SCI 등재 (등재유지) | |
2005-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
2002-07-01 | 평가 | 등재학술지 선정 (등재후보2차) | |
2000-01-01 | 평가 | 등재후보학술지 선정 (신규평가) |
학술지 인용정보
기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
---|---|---|---|
2016 | 0.47 | 0.15 | 0.31 |
KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
0.26 | 0.2 | 0.26 | 0.03 |