Optoelectronic characteristics of the superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently...
Optoelectronic characteristics of the superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice with multilayer Si-O structure showed the stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator(SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.