In this paper, the plasma treatment on gate surface has been applied prior to deposition of pentacene and the effects on performance were investigated. The plasma treatment produced the mobility of 0.05cm2/V·sec which is 10 times larger than the non-...
In this paper, the plasma treatment on gate surface has been applied prior to deposition of pentacene and the effects on performance were investigated. The plasma treatment produced the mobility of 0.05cm2/V·sec which is 10 times larger than the non-treated. The resistance was also reduced from 400KΩ to 50KΩ. In addition, the standard deviation of performance parameters variation was reduced with the plasma exposure time, which implies that plasma treatment makes the gate surface states be uniform across the whole wafer area. The performance parameters were increased with the exposure time up to 5min, after which they degraded again. Therefore, the optimal exposure time was found to be 5min.