Study of CVD SiC deposition for TRISO coated fuel material fabrication by computational simulation and actual experiment

다국어 초록 (Multilingual Abstract)

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) coated fuel particles is a critical and essential layer for
hydrogen production using high temperature gas cooled reactor (HTGR) since it is a protective layer against diffusion of
metallic and gaseous fission products and provides mechanical strength for the fuel particle. In this study, SiC layers were
deposited using a high temperature and high pressure horizontal hot wall chemical vapor deposition (CVD) system as an
application of fluidized bed chemical vapor deposition (FB-CVD). Before the actual experiment, we performed computational
simulations of the gas velocity, temperature profile and pressure in the reaction chamber with various process conditions. The
simulation showed that the change of reactant states affects the growth rate at each position on the susceptor. As the deposition
temperature increased, the microstructure, chemical composition and growth behavior changed and deposition rate increased.
The simulation results were in good agreement with the experimental results.

다국어 초록 (Multilingual Abstract)

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) coated fuel particles is a critical and essential layer for
hydrogen production using high temperature gas cooled reactor (HTGR) since it is a protective layer against diffusion of
metallic and gaseous fission products and provides mechanical strength for the fuel particle. In this study, SiC layers were
deposited using a high temperature and high pressure horizontal hot wall chemical vapor deposition (CVD) system as an
application of fluidized bed chemical vapor deposition (FB-CVD). Before the actual experiment, we performed computational
simulations of the gas velocity, temperature profile and pressure in the reaction chamber with various process conditions. The
simulation showed that the change of reactant states affects the growth rate at each position on the susceptor. As the deposition
temperature increased, the microstructure, chemical composition and growth behavior changed and deposition rate increased.
The simulation results were in good agreement with the experimental results.