Polyimide/polyvinyl alcohol bilayer gate insulator for low-voltage organic thin-film transistors

다국어 초록 (Multilingual Abstract)

<P><B>Abstract</B></P> <P>In this paper, we report the fabrication of a polyimide/polyvinyl alcohol (PVA) bilayer gate insulator for low-voltage organic thin-film transistors (TFTs). The introduction of a PVA layer to form a bilayer structure improves the dielectric and insulating properties of the gate insulator. Organic TFTs with 150nm-thick polyimide and PVA gate insulators were inactive at low operation voltages below 5V. Conversely, organic TFTs with 150nm-thick polyimide/PVA bilayer gate insulators exhibited excellent device performances. Our results suggest that the introduction of a PVA layer with a high dielectric constant could be a simple and efficient way to improve the device performance of low-voltage organic TFTs.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We report the polyimide/PVA bilayer gate insulator for low-voltage organic TFTs. </LI> <LI> Introduction of the PVA layer for forming the bilayer structure improves dielectric and insulating properties of the gate insulator. </LI> <LI> Pentacene and C<SUB>8</SUB>-BTBT TFTs with the 150nm-thick bilayer gate insulators exhibited excellent device performance. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>