CW Laser Annealing 과정중 SOS 상의 시간적 온도변화 측정에 관한 연구 = A Study on TSRTM for Si Wafer during CW Ar Laser Annealing of SOS

다국어 초록 (Multilingual Abstract)

The purpose of this experiment is to demonstrate the new method of TSRTM during CW Ar laser annealing using a He-Ne laser probe beam. Optical interference phenomena by a small changes of refractive index of Si, which is induced by the temperature change during short time laser annealing on the Si wafer surface, was used.
The samples, SOS(Silicon on Sapphire), used in this work were epi. <100> Si grown on a <1012> insulator sapphire substrate with 2.0μm thickness. From the experimental temperature dependent equation of the refraction of index of Si with respect to the probe beam(λ=6328 Å) in furnace experiment, n(T)=3.98+7×10-4T (℃), the temperature on the destructtve or constructive interference was calculated. Incident Ar laser beam whose power ranges from 1.8W to 2.8W was irradiated and the effect of temperature rise of Si wafer on the elliptical spot whose major and minor axis is 200μm, 15μm respectively is investigated by the He-Ne laser probe beam which is focused 30μm. The annealing time ranges from 8 msec~250 msec to 500 msec~20 sec was adopted to estimate that the first constructive interference is occurred at least total irradiated power density 5.46×102Jㆍsec/cm2, and it is inferred that more than 180msec is needed for the first constructive interference when the total incident energy is 2.8 W.
For the longtime annealing, about more than 1 sec, the interference pattern was coincided with the result produced by the furnace experiment.
It is investigated from the space-resolved temperature gradient that the irradiated laser beam was focused in center.

목차 (Table of Contents)

• Ⅰ. 서론
• Ⅱ. 이론
• Ⅲ. 실험 과정
• Ⅳ. 실험결과 및 분석
• Ⅴ. 결론