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Scanning tunnelling microscopy studies of GaAs and related compounds
Biegelsen, D. K. IOP PUBLISHING LTD 1993 p.3
Low dislocation density 6-inch diameter GaAs single crystals grown by the VCZ method
Kawase, T. IOP PUBLISHING LTD 1993 p.13
Growth of 4-inch diameter pure GaAs by arsenic-pressure-controlled Czochralski method
Atami, T. IOP PUBLISHING LTD 1993 p.25
Kusunoki, T. IOP PUBLISHING LTD 1993 p.37
Selective growth of GaAs and GaAlAs by Cl-assisted MOVPE at atmospheric pressure
Azoulay, R. IOP PUBLISHING LTD 1993 p.43
Selective-area epitaxy of GaAs using a new mask material for in situ processes
Yoshida, S. IOP PUBLISHING LTD 1993 p.49
Selective area growth of GaAs by molecular beam epitaxy with atomic hydrogen irradiation
Sugaya, T. IOP PUBLISHING LTD 1993 p.55