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GaAs on silicon using an oxide buffer layer
Droopad, R.; Curless, J.; Yu, Z.; Jordan, D.; Liang, Y.; Overgaard, C.; Li, H.; Eschrich, T.; Ramdani, J.; Hilt, L. Philadelphia; Institute of Physics; 1999 2003 p.1-8
Oyama, Y.; Ohno, T.; Tezuka, K.; Suto, K.; Nishizawa, J.-i. Philadelphia; Institute of Physics; 1999 2003 p.9-12
Growth and properties of polycrystalline GaN on ZnO/Si substrates by ECR-MBE
Kitamura, K.; Mamiya, H.; Araki, T.; Maruyama, T.; Nanishi, Y. Philadelphia; Institute of Physics; 1999 2003 p.13-16
Single crystalline InN films grown on Si (111) substrates
Yamaguchi, T.; Mizuo, K.; Saito, Y.; Araki, T.; Nanishi, Y. Philadelphia; Institute of Physics; 1999 2003 p.17-20
Growth and evaluation of CdTe/Si (111) by hot wall epitaxy
Lalev, G. M.; Wang, J.; Abe, S.; Masumoto, K.; Isshiki, M. Philadelphia; Institute of Physics; 1999 2003 p.21-24
Asaoka, Y.; Ihara, I.; Yokoyama, K.; Daicho, S.; Sano, N.; Kaneko, T. Philadelphia; Institute of Physics; 1999 2003 p.25-28
Comparative study of p-type dopants, Mg and Be in GaN grown by RF-MBE
Sugita, S.; Watari, Y.; Yoshizawa, G.; Sodesawa, J.; Yamamizu, H.; Liu, K. T.; Su, Y. K.; Horikoshi, Y. Philadelphia; Institute of Physics; 1999 2003 p.29-32
Area selective epitaxy of anti-dot structure by solid source MBE using MEE deposition sequence
Okada, D.; Hasegawa, H.; Hasegawa, T.; Horikoshi, Y.; Saitoh, T. Philadelphia; Institute of Physics; 1999 2003 p.33-36
Contribution of interface states and bulk traps to GaAs MIS admittance
Kochowski, S.; Paszkiewicz, B.; Paszkiewicz, R. Philadelphia; Institute of Physics; 1999 2003 p.37-40
Too, P.; Ahmed, S.; Sealy, B. J.; Gwilliam, R. Philadelphia; Institute of Physics; 1999 2003 p.41-44