This paper presents a monolithic integrated circuit designed for a low dropout(LDO) voltage and high accuracy voltage regulator. It consists of bandgap reference, TSD(Thermal Shut Down), TCC(Temperature Compensation Circuit), OVP(Over Voltage Protecti...
This paper presents a monolithic integrated circuit designed for a low dropout(LDO) voltage and high accuracy voltage regulator. It consists of bandgap reference, TSD(Thermal Shut Down), TCC(Temperature Compensation Circuit), OVP(Over Voltage Protection), OCP(Over Current Protection), bias and output current driving circuits. In order to obtain accurate regulation voltages, metal fusing technique is adopted thus the accuracy of the reference voltage is Vout±1[%]. The maximum current driving capability of this IC is 1.5[A] at 1.2[V] Dropout voltage and a line regulation of a regulated output voltage is measured less than 0.02[%]. The stand-by current is 5[mA]. This circuit has been designed by a 2[㎛], 20[V] bipolar technology and the die area is 2.1 [㎟].