<P>The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MO...
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https://www.riss.kr/link?id=A107685592
2013
-
SCOPUS,SCIE
학술저널
942-944(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MO...
<P>The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MOSFETs) in terms of subthreshold swing (S) and threshold voltage (V<SUB>th</SUB>). TFETs show ~ 1.4× larger V<SUB>th</SUB> standard deviation (σV<SUB>th</SUB>) and ~ 4.6× larger S standard deviation (σS) than MOSFETs at high drain voltage (VD). It is because TFET characteristics are mainly determined by WF values of metal grains near to the source region where band-to-band tunneling occurs.</P>
Controlling the Threshold Voltage of Organic Thin-Film Transistors by Transition Metal Oxides