Fabrication of Phosphorescence WOLED Based on Dimeric Phenoxazine Moiety for Hole Injection Layer = Fabrication of Phosphorescence WOLED Based on Dimeric Phenoxazine Moiety for Hole Injection Layer

다국어 초록 (Multilingual Abstract)

Hole injection material, namely, 10,10_-bis(4-tert-butylphenyl)-N7, N7_-di(naphthalen-1-yl)-N7,N7_-diphenyl-10H,10_H-3,3_-biphenoxa zine-7,7_-diamine (1-PNA-BPBPOX), were adapted to white OLED devi ces for solution process. White devices were fabricated using a multilay er emission structure, consisting of a single host layer. The red phospho rescent, (Ir(piq)3_, and the blue phosphorescent,(FIrpic), are doped into separate layers of (mCP) host. The FIrpic and Ir(piq)3 guest molecules are directly excited by direct recombination on these molecules. When the device with BPBPOX was compared to the device with PEDOT:PSS, a commercialized solution HIL material, the luminance efficiency was 6.37 cd/A for BPBPOX and 0.66 cd/A for PEDOT:PSS for the optimized white device structure, showing 10 times as high efficiency.