In the time when we fabricated the NPH bipolar transistor the temperature annealing was needed.
Then the properties of transistor was damaged because of inducing the silicon lattice defects.
In this paper, proposed codiffusion method was able to con...
In the time when we fabricated the NPH bipolar transistor the temperature annealing was needed.
Then the properties of transistor was damaged because of inducing the silicon lattice defects.
In this paper, proposed codiffusion method was able to control of junction depth by implant energy, dose concentration, diffusing temperature and annealing time control. In addition to, we studied for developed the transistor of high speed switching.