A Study on the Characteristic of Parameters by the Response Surface Method in Final Wafer Polishing

다국어 초록 (Multilingual Abstract)

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput
in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important
processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in
final wafer polishing is mainly affected by the many process parameters. For decreasing the surface, the control of
polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer
polishing and the effect of polishing parameters on the surface roughness were evaluated by using central
composite designs such as the Box-Behnken method. Moreover, in accordance with variation of process variables,
there is a temperature change on pad surface. And so, this paper also researches that this temperature variation
affects surface roughness of Si-wafer.

참고문헌 (Reference)

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